Datasheet > MMBV409LT1

MMBV409LT1

更新时间： 2024-09-19 22:26:07

品牌	Logo	应用领域
乐山 - LRC		二极管变容二极管测试光电二极管
页数	文件大小	规格书
2页	104K
描述
Silicon Tuning Diode

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技术参数
数据手册

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MMBV409LT1 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.75
标称二极管电容：	29 pF	二极管类型：	VARIABLE CAPACITANCE DIODE
最小质量因数：	200	最大重复峰值反向电压：	20 V
子类别：	Varactors	表面贴装：	YES
Base Number Matches：	1

MMBV409LT1 数据手册

LESHAN RADIO COMPANY, LTD.

Silicon Tuning Diode

MMBV409LT1

MV409

These devices are designed forgeneral frequency control and tuning applications.

They provide solid- state reliability in replacement of mechanical tuning methods.

VOLTAGE VARIABLE

CAPACITANCE DIODES

• High Q with Guaranteed Minimum Values at VHF Frequencies

• Controlled and Uniform Tuning Ratio

• Available in Surface Mount Package

ANODE

CATHODE

CASE 318–08, STYLE 8

SOT– 23 (TO–236AB)

MAXIMUM RATINGS

Rating

Symbol

MBV409

MMBV409LT1

Unit

Vdc

Reverse Voltage

Forward Current

200

mAdc

Forward Power Dissipation

@ T = 25°C

Derate above 25°C

280

2.8

225

1.8

mW/°C

Junction Temperature

Storage Temperature Range

+125

–55 to +150

°C

stg

DEVICE MARKING

MMBV409LT1 = X5, MV409 = MV409

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(BR)R

—

Vdc

(I = 10 µAdc)

Reverse Voltage Leakage Current

(V = 15 Vdc)

—

0.1

—

µAdc

Diode Capacitance Temperature Coefficient

300

ppm/°C

(V = 3.0 Vdc, f = 1.0 MHz)

C , Diode Capacitance

Q, Figure of Merit

= 3.0 Vdc

C , Capacitance Ratio

= 3.0 Vdc, f = 1.0 MHz

C /C

3 8

(1)

Nom

f = 50 MHz

f = 1.0 MHz

Min

1.5

Device

Min

Max

Min

Max

1.9

MMBV409LT1, MV409

200

1. C is the ratio of C measured at 3 Vdc divided by C measured at 8 Vdc.

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