Datasheet > MMBV432

MMBV432

更新时间： 2024-09-19 22:51:11

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
2页	72K
描述
Silicon Tuning Diode

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中文翻译

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数据手册

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MMBV432 数据手册

LESHAN RADIO COMPANY, LTD.

Silicon Tuning Diode

This device is designed for FM tuning, general frequency control and

tuning, or any top–of–the–line application requiring back–to–back diode con-

figuration for minimum signal distortion and detuning. This device is supplied

in the SOT–23 plastic package for high volume, pick and place assembly

requirements.

MMBV432LT1

DUAL

VOLTAGE VARIABLE

CAPACITANCE DIODE

• High Figure of Merit— Q = 150 (Typ) @ V _R= 2.0 Vdc, f = 100 MHz

• Guaranteed Capacitance Range

• Dual Diodes – Save Space and Reduce Cost

• Surface Mount Package

• Available in 8 mm Tape and Reel

• Monolithic Chip Provides Improved Matching – Guaranteed ± 1.0% (Max)

Over Specified Tuning Range

CASE 318–08, STYLE 9

SOT– 23 (TO–236AB)

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol

Value

Unit

Vdc

mAdc

Reverse Voltage

Forward Current

I _F

200

Device Dissipation @T _A= 25°C

Derate above 25°C

P _D

225

1.8

mW/°C

°C

Junction Temperature

Storage Temperature Range

T _J

+125

T _stg

–55 to +125

°C

DEVICE MARKING

MMBV432LT1=M4B

ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

(I_R=10µAdc)

Symbol

Min

Typ

Max

Unit

V _(BR)R

—

Vdc

Reverse Voltage Leakage Current

(V_R=9.0Vdc)

I _R

C _T

C _R

—

100

48.1

2.0

—

nAdc

Diode Capacitance

(V_R=2.0 Vdc,f=1.0MHz)

Capacitance Ratio C2/C8

(f=1.0MHz)

1.5

100

—

Figure of Merit

150

—

(V_R=2.0 Vdc, f=100MHz)

MMBV432–1/2

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