MMBV3700LT1G
High Voltage Silicon Pin
Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in general−purpose switching
circuits. They are supplied in a cost−effective plastic package for
economical, high−volume consumer and industrial requirements.
They are also available in surface mount.
http://onsemi.com
SOT−23
Features
1
Anode
3
Cathode
• Long Reverse Recovery Time t = 300 ns (Typ)
• Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
rr
• Low Series Resistance @ 100 MHz −
MARKING
DIAGRAM
R = 0.7 W (Typ) @ I = 10 mA
S
F
• Reverse Breakdown Voltage = 200 V (Min)
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
4R M G
Compliant
G
1
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
SOT−23 (TO−236AB)
CASE 318−08
STYLE 8
Reverse Voltage
V
R
D
200
V
Forward Power Dissipation
P
@ T = 25°C
200
2.8
mW
mW/°C
A
4R = Specific Device Code
Derate above 25°C
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
Junction Temperature
T
+125
°C
°C
J
Storage Temperature Range
T
stg
−55 to +150
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBV3700LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 5
MMBV3700LT1/D