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MMBTA92W

更新时间: 2024-11-20 05:49:23
品牌 Logo 应用领域
商升特 - SEMTECH 晶体晶体管
页数 文件大小 规格书
1页 85K
描述
PNP Silicon Epitaxial Planar Transistor

MMBTA92W 数据手册

  
MMBTA92W  
PNP Silicon Epitaxial Planar Transistor  
for high voltage switching and amplifier applications  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
Unit  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
-VCBO  
-VCEO  
-VEBO  
-IC  
300  
V
V
300  
5
100  
V
mA  
mW  
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
Ptot  
200  
O
C
Tj  
150  
O
C
TS  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Max.  
Unit  
DC Current Gain  
at -VCE = 10 V, -IC = 1 mA  
at -VCE = 10 V, -IC = 10 mA  
at -VCE = 10 V, -IC = 30 mA  
hFE  
hFE  
hFE  
25  
40  
25  
-
-
-
-
-
-
Collector Base Breakdown Voltage  
at -IC = 100 µA  
Collector Emitter Breakdown Voltage  
at -IC = 1 mA  
Emitter Base Breakdown Voltage  
at -IE = 100 µA  
Collector Base Cutoff Current  
at -VCB = 200 V  
-V(BR)CBO  
-V(BR)CEO  
-V(BR)EBO  
-ICBO  
300  
-
-
V
V
300  
5
-
-
V
250  
100  
0.5  
0.9  
-
nA  
nA  
V
Emitter Base Cutoff Current  
at -VEB = 3 V  
-IEBO  
-
Collector Emitter Saturation Voltage  
at -IC = 20 mA, -IB = 2 mA  
Base Emitter Saturation Voltage  
at -IC = 20 mA, -IB = 2 mA  
Transition Frequency  
at -VCE = 20 V, -IC = 10 mA, f = 100 MHz  
Collector Output Capacitance  
at -VCB = 20 V, f = 1 MHz  
-VCE(sat)  
-VBE(sat)  
fT  
-
-
V
50  
-
MHz  
pF  
Cob  
6
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 10/11/2006  

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