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MMBTA93

更新时间: 2024-01-13 01:35:53
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管光电二极管IOT
页数 文件大小 规格书
1页 946K
描述
TRANSISTOR(PNP)

MMBTA93 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MMBTA93 数据手册

  
MMBTA93  
TRANSISTOR(PNP)  
SOT23  
FEATURES  
High Voltage Application  
Telephone Application  
Complementary to MMBTA43  
MARKING:YW  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Collector-Base Voltage  
Value  
Unit  
V
-200  
V
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-200  
-5  
Collector Current  
-500  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
350  
PC  
RΘJA  
Tj  
357  
150  
Storage Temperature  
Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
Typ  
Max  
Unit  
V
IC=-100µA, IE=0  
-200  
-200  
-5  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=-1mA, IB=0  
V
IE=-100µA, IC=0  
V
VCB=-200V, IE=0  
VCE=-200V, IB=0  
VEB=-5V, IC=0  
-0.25  
-0.25  
-0.1  
µA  
µA  
µA  
ICEO  
Collector cut-off current  
IEBO  
Emitter cut-off current  
hFE(1)  
*
VCE=-10V, IC=-10mA  
VCE=-10V, IC=-1mA  
VCE=-10V, IC=-30mA  
IC=-20mA, IB=-2mA  
IC=-20mA, IB=-2mA  
VCE=-20V,IC=-10mA,  
f=100MHz  
40  
25  
25  
DC current gain  
hFE(2*  
)
hFE(3)  
*
VCE(sat)  
*
-0.5  
-0.9  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VBE(sat)  
*
fT  
50  
MHz  
pF  
Transition frequency  
Cob  
VCB=-20V, IE=0, f=1MHz  
8
Collector output capacitance  
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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