Datasheet > MMBTA94

MMBTA94

更新时间： 2024-09-23 10:52:23

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管光电二极管高压 IOT
页数	文件大小	规格书
3页	377K
描述
PNP Silicon High Voltage Transistor

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中文翻译

获取价格

数据手册

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MMBTA94 数据手册

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

MMBTA94

Features

•

Surface Mount SOT-23 Package

PNP Silicon High

Voltage Transistor

Capable of 350mWatts of Power Dissipation

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking: 4D

SOT-23

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

Collector-Emitter Breakdown Voltage*

(I_C=-1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=-100µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=-100µAdc, I_C=0)

-400

-5

Vdc

I_C

Collector Current-Continuous

-100

mAdc

nAdc

I_CBO

Collector Cutoff Current

(V_CB=-400Vdc, I_E=0)

Emitter Cutoff Current

(V_EB=-4Vdc, I_C=0)

-100

I_EBO

nAdc

150

°C

Junction Temperature

Storage Temperature

DIMENSIONS

stg

–55 to +150

INCHES

DIM

MIN

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

NOTE

ON CHARACTERISTICS

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

h_FE

DC Current Gain*

(I_C=-1.0mAdc, V_CE=-10Vdc)

(I_C=-10mAdc, V_CE=-10Vdc)

(I_C=-50mAdc, V_CE=-10Vdc)

(I_C=-100mAdc,V_CE=-10Vdc)

300

V_CE(sat)

Collector-Emitter Saturation Voltage

(I_C=-10mAdc, I_B=-1.0mAdc)

(I_C=-50mAdc, I_B=-5mAdc)

.085

.37

-0.2

-0.3

Vdc

V_BE(sat)

Base-Emitter Saturation Voltage

(I_C=-50mAdc,I_B=-1.0mAdc)

-0.75

SMALL-SIGNAL CHARACTERISTICS

Suggested Solder

Pad Layout

f_T

Current Gain-Bandwidth Product

(I_C=-10mAdc, V_CE=-20Vdc, )

MHz

.031

.800

.035

.900

.079

inches

2.000

.037

.950

.037

.950

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Revision: A

2011/01/01

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