Datasheet > MMBTA94

MMBTA94

更新时间： 2024-11-14 02:55:39

品牌	Logo	应用领域
科信 - KEXIN		IOT 光电二极管晶体管
页数	文件大小	规格书
2页	1806K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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MMBTA94 数据手册

SMD Type

Transistors

PNP Transistors

MMBTA94 (KMBTA94)

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High Breakdown Voltage

●Complement to MMBTA44

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

-400

-5

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current -Pulsed

-200

-300

350

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

RΘJA

150

℃/W

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I =0

CB= -400 V , I =0

EB= -4V , I =0

Min

-400

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-100

-0.2

CE(sat)1

CE(sat)2

=-10 mA, I

=-1mA

Collector-emitter saturation voltage

Base - emitter saturation voltage

=-50 mA, I

=-5mA

-0.3

BE(sat)

= -10mA, I

=- 1mA

-0.75

300

FE(1)

FE(2)

FE(3)

FE(4)

CE= -10V, I

^CE= -10V, I

^CE= -20V, I

= -10mA

= -1mA

DC current gain

= -100mA

= -50mA

Transition frequency

= 10mA,f=30MHz

MHz

■ Classification of hfe(1)

Type

Range

Marking

MMBTA94

MMBTA94-L

100-200

80-300

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