Datasheet > MMBTA94

MMBTA94

更新时间： 2024-11-14 14:54:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1596K
描述
SOT-23

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中文翻译

获取价格

数据手册

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MMBTA94 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBTA94 TRANSISTOR（PNP）

SOT–23

FEATURES

 High Breakdown Voltage

MARKING:4D

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

Parameter

Value

Unit

2. EMITTER

3. COLLECTOR

V_CBO

Collector-Base Voltage

-400

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

-400

-5

Emitter-Base Voltage

Equivalent Circuit

Collector Current -Continuous

Collector Current -Pulsed

-200

-300

350

357

℃/W

I_CM

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBO

I_C=-100µA, I_E=0

-400

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=-1mA, I_B=0

-400

-5

I_E=-100µA, I_C=0

V_CB=-400V, I_E=0

V_CE=-400V, I_B=0

V_EB=-4V, I_C=0

-0.1

-5

µA

I_CEO

Collector cut-off current

I_EBO

-0.1

300

Emitter cut-off current

h_FE(1)

V_CE=-10V, I_C=-10mA

V_CE=-10V, I_C=-1mA

V_CE=-10V, I_C=-100mA

V_CE=-10V, I_C=-50mA

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

I_C=-10mA, I_B=-1mA

V_CE=-20V,I_C=-10mA,

f=30MHz

h_FE(2)

DC current gain

h_FE(3)

h_FE(4)

V_CE(sat)1

V_CE(sat)2

V_BE(sat)

-0.2

-0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

-0.75

f_T

MHz

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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