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MMBTA93-TP PDF预览

MMBTA93-TP

更新时间: 2024-02-02 03:38:45
品牌 Logo 应用领域
美微科 - MCC 光电二极管晶体管
页数 文件大小 规格书
3页 433K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

MMBTA93-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MMBTA93-TP 数据手册

 浏览型号MMBTA93-TP的Datasheet PDF文件第2页浏览型号MMBTA93-TP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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TM  
Micro Commercial Components  
MMBTA93  
Features  
·
Surface Mount SOT-23 Package  
PNP Silicon High  
Voltage Transistor  
Capable of 300mWatts of Power Dissipation  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
·
Marking: YW  
·
Halogen free available upon request by adding suffix "-HF"  
SOT-23  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
A
Symbol  
Parameter  
Min  
Max  
Units  
D
OFF CHARACTERISTICS  
C
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
Collector-Emitter Breakdown Voltage  
(IC=-1.0mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=-100µAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=-100µAdc, IC=0)  
-200  
-200  
-5  
Vdc  
Vdc  
Vdc  
B
C
E
B
F
E
IC  
Collector Current-Continuous  
-500  
mAdc  
nAdc  
ICBO  
Collector Cutoff Current  
(VCB=-200Vdc, IE=0)  
Emitter Cutoff Current  
(VEB=-5Vdc, IC=0)  
-250  
-100  
H
G
IEBO  
nAdc  
K
ON CHARACTERISTICS  
DIMENSIONS  
hFE  
DC Current Gain  
INCHES  
MIN  
MM  
(IC=-1.0mAdc, VCE=-10Vdc)  
(IC=-10mAdc, VCE=-10Vdc)  
(IC=-30mAdc, VCE=-10Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-20mAdc, IB=-2.0mAdc)  
25  
40  
25  
DIM  
A
B
C
D
E
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.120  
.104  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
VCE(sat)  
VBE(sat)  
-0.5  
-0.9  
Vdc  
Vdc  
Base-Emitter Saturation Voltage  
(IC=-20mAdc,IB=-2.0mAdc)  
F
G
H
J
SMALL-SIGNAL CHARACTERISTICS  
.085  
.37  
K
fT  
Current Gain-Bandwidth Product  
(IC=-10mAdc, VCE=-20Vdc, f=100MHz)  
Collector-Base Capacitance  
(VCB=-20Vdc, IE=0, f=1.0MHz)  
50  
MHz  
pF  
Ccb  
8.0  
Suggested Solder  
Pad Layout  
THERMAL CHARACTERISTICS  
.031  
.800  
Characteristic  
Symbol  
Max  
Unit  
mW  
.035  
.900  
Pc  
300  
417  
Collector Power Dissipation  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
°C/mW  
°C  
qJA  
.079  
inches  
2.000  
mm  
T , T  
–55 to +150  
J
stg  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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