Datasheet > MMBTA9XLT1

MMBTA9XLT1

更新时间： 2024-09-23 12:23:55

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
4页	417K
描述
HighVoltageTransistor

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中文翻译

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数据手册

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MMBTA9XLT1 数据手册

WILLAS

MMBTA9xLT1

High Voltage Transistor

PNP Silicon

FEATURE

ƽHigh voltage.

ƽFor Telephony or Professional communication equipment applications.

RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

MMBTA92LT1

3000/Tape&Reel

SOT–23

MMBTA93LT1

3000/Tape&Reel

COLLECTOR

MAXIMUM RATINGS

Value

Symbol M MBTA92 MMBTA93 Unit

BASE

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

V _CEO

V _CBO

V _EBO

I _C

–300

–200

Vdc

EMITTER

–5.0

Vdc

–500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

225

TA = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

RθJA

Alumina Substrate, (2) T

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

417

, T^stg

–55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width 300 µs, Duty Cycle

< 2.0%.

2012-11

WILLAS ELECTRONIC CORP.

12 3 4

中文翻译

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