Datasheet > MMBTA94LT1

MMBTA94LT1

更新时间： 2024-09-23 12:23:55

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管局域网
页数	文件大小	规格书
3页	387K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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数据手册

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MMBTA94LT1 数据手册

WILLAS

MMBTA94LT1

PNP EPITAXIAL PLANAR TRANSISTOR

We declare that the material of product

compliance with RoHS requirements.

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Description

SOT– 23

The M MBTA94LT1 is designed for application

that requires high voltage.

COLLECTOR

Features

• High Breakdown Voltage: VCEO=400(Min.) at IC=1mA

• Complementary to M MBTA94LT1

BASE

DEVICE MARKING

M MBTA94LT1= 4Z

EMITTER

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 350 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... -400 V

VCEO Collector to Emitter Voltage................................................................................... -400 V

VEBO Emitter to Base Voltage............................................................................................. -6 V

IC Collector Current ...................................................................................................... -150 mA

Characteristics (Ta=25 C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-100uA, IE=0

IC=-1mA, IB=0

IE=-10uA, IC=0

VCB=-400V, IE=0

VEB=-6V, IC=0

VCE=-400V, VBE=0

IC=-1mA, IB=-0.1mA

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

IC=-10mA, IB=-1mA

VCE=-10V, IC=-1mA

VCE=-10V, IC=-10mA

VCE=-10V, IC=-50mA

VCE=-10V, IC=-100mA

VCE=-10V, f=1MHz

BVCBO

BVCEO

BVEBO

ICBO

IEBO

ICES

*VCE(sat)1

*VCE(sat)2

*VCE(sat)3

*VBE(sat)

*hFE1

-400

-6

-100

-500

-200

-300

-600

-900

*hFE2

*hFE3

*hFE4

Cob

200

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

2012-11

WILLAS ELECTRONIC CORP.

12 3

中文翻译

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