Datasheet > MMBTA93

MMBTA93

更新时间： 2024-11-14 18:06:27

品牌	Logo	应用领域
MERITEK		/
页数	文件大小	规格书
2页	592K
描述
MMBTA93 \| 200V 350mW PNP Transistor SOT-23

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中文翻译

获取价格

数据手册

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MMBTA93 数据手册

PNP Transistor

-200V , -300V 0.35W SOT-23

MMBTA9x Series

FEATURES



PNP Silicone Design for High Voltage Application

Miniature Surface Mount Package for SMT process

Application: Switching and Amplification Circuit

ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS and

Parameter

Symbol

Value

-300

Unit

MMBTA92

MMBTA93

MMBTA92

MMBTA93

Collector Base Voltage

V_CBO

-200

-300

Collector Emitter Voltage

V_CEO

-200

Emitter Base Voltage

Collector Current

Power Dissipation

V_EBO

I_C

-5.0

500

ºC

P_tot

350

Operating and Storage Junction Temperature

T_J,T_STG

-55~+150

Parameter

Conditions

V_CE= -10V, I_C= -1mA

V_CE= -10V, I_C= -10mA

V_CE= -10V, I_C= -30mA

V_CB= -200V

Symbol

h_FE

Min

Max

Unit

DC Current Gain

200

MMBTA92

100

Collector Base Cutoff Current

Emitter Base Cutoff Current

I_CBO

I_EBO

MMBTA93

V_CB= -160V

V_EB= -3V

-100

MMBTA92

MMBTA93

MMBTA92

MMBTA93

-300

-200

-300

-200

-5

Collector Base Breakdown

Voltage

V_(BR)CBO

I_C= -100µA

I_C= -1mA

Collector Emitter Breakdown

Voltage

V_(BR)CEO

Emitter Base Breakdown Voltage

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

V_(BR)EBO

V_CE(sat)

V_BE(sat)

I_E= -100µA

I_C= -20mA, I_B= -2mA

-0.50

-0.90

V_CE= -20V, I_C=-10mA,

f=100MHz

Gain Bandwidth Product

f_T

MHz

MMBTA92

MMBTA93

Collector Capacitance

V_CB= -20V, f=1MHz

Notes: T_A=25 ºC Unless Otherwise Specified

Rev. 0a 10/01/20

Meritek Electronics Corporation | www.meritekusa.com

中文翻译

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