MMBTA92LT1G,
MMBTA93LT1G
High Voltage Transistors
PNP Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
MAXIMUM RATINGS
1
BASE
Rating
Symbol
92
93
Unit
Vdc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
CBO
V
EBO
−300
−300
−5.0
−200
−200
−5.0
Vdc
2
EMITTER
Vdc
Collector Current — Continuous
DEVICE MARKING
I
C
−500
mAdc
MARKING
DIAGRAM
3
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic
1
2
2x MG
G
SOT−23 (TO−236AF)
CASE 318
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
225
mW
D
STYLE 6
(Note 1) T = 25°C
A
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
2x = Specific Device Code
M
G
= Date Code*
= Pb−Free Package
Thermal Resistance, Junction to Ambient
R
q
JA
Total Device Dissipation (Note 2)
P
D
(Note: Microdot may be in either location)
(2)
Alumina Substrate, T = 25°C
A
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
q
417
JA
T , T
J
−55 to
stg
+150
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
†
Device
Package
Shipping
MMBTA92LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBTA92LT3G
MMBTA93LT1G
SOT−23 10000 / Tape & Reel
(Pb−Free)
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
July, 2010 − Rev. 8
MMBTA92LT1/D