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MMBTA56-TP-HF PDF预览

MMBTA56-TP-HF

更新时间: 2024-11-18 18:15:15
品牌 Logo 应用领域
美微科 - MCC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 251K
描述
Small Signal Bipolar Transistor, 0.5A I(C), PNP,

MMBTA56-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.64
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.225 W子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MMBTA56-TP-HF 数据手册

 浏览型号MMBTA56-TP-HF的Datasheet PDF文件第2页浏览型号MMBTA56-TP-HF的Datasheet PDF文件第3页浏览型号MMBTA56-TP-HF的Datasheet PDF文件第4页 
M C C  
MMBTA55  
THRU  
MMBTA56  
TM  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
This device is designed for general purpose amplifier applications at  
collector current to 300mA  
PNP General  
Purpose Amplifier  
·
Markin : MMBTA55=2H/B55, MMBTA56=2GM/B56  
Epoxy meets UL 94 V-0 flammability rating  
·
Moisure Sensitivity Level 1  
Maximum Ratings  
Symbol  
SOT-23  
Rating  
Rating  
Unit  
A
VCEO  
Collector-Emitter Voltage  
D
C
MMBTA55  
MMBTA56  
60  
80  
V
VCBO  
Collector-Base Voltage  
B
C
MMBTA55  
MMBTA56  
60  
80  
V
E
B
VEBO  
IC  
TJ  
Emitter-Base Voltage  
4.0  
500  
-55 to +150  
-55 to +150  
V
F
E
Collector Current, Continuous  
Operating Junction Temperature  
Storage Temperature  
mA  
OC  
OC  
TSTG  
H
G
J
Thermal Characteristics  
Symbol  
Rating  
Max  
225  
1.8  
Unit  
K
PD  
Total Device Dissipation*  
mW  
Derate above 25OC  
mW/ OC  
DIMENSIONS  
RJA  
Thermal Resistance, Junction to Ambient  
556  
OC/W  
INCHES  
MIN  
MM  
DIM  
A
B
C
D
E
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.120  
.104  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown Voltage (1)  
F
(IC=1.0mAdc, IB=0)  
MMBTA55  
MMBTA56  
60  
80  
---  
---  
Vdc  
Vdc  
G
H
J
.100  
1.12  
.180  
.51  
.085  
.37  
V(BR)EBO  
Emitter-Base Breakdown Voltage  
(IE=100ì Adc, IC=0)  
K
4.0  
---  
Suggested Solder  
Pad Layout  
I
Collector Cutoff Current  
CBO  
(VCB=60Vdc, I =0)  
MMBTA55  
MMBTA56  
---  
---  
0.1  
0.1  
uAdc  
uAdc  
E
(VCB=80Vdc, I =0)  
E
.031  
.800  
ICES  
Emitter Cutoff Current  
(VCE=60Vdc, I =0)  
---  
0.1  
uAdc  
B
.035  
.900  
ON CHARACTERISTICS  
.079  
2.000  
hFE  
DC Current Gain  
(VCE=1.0Vdc, I =10mAdc)  
(VCE=1.0Vdc, I =100mA)  
inches  
mm  
100  
100  
---  
---  
---  
C
C
VCE(sat)  
VBE(on)  
fT  
Collector-Emitter Saturation Voltage  
(IC=100mAdc, IB=10mAdc)  
Base-Emitter On Voltage  
---  
---  
50  
0.25  
1.2  
---  
Vdc  
Vdc  
MHz  
.037  
.950  
.037  
.950  
(IC=100mAdc, VCE=1.0Vdc)  
Current-Gain—Bandwidth Product(2)  
(IC=100mAdc, VCE=1.0Vdc, f=100MHz)  
www.mccsemi.com  
1 of 4  
Revision: B  
2013/01/01  

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