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MMBT5771 PDF预览

MMBT5771

更新时间: 2024-11-17 22:54:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关小信号双极晶体管射频小信号双极晶体管光电二极管PC
页数 文件大小 规格书
4页 129K
描述
PNP Switching Transistor

MMBT5771 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:3.37
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:1060636Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT PNPSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08 ISSUE ASSamacsys Released Date:2018-06-14 06:30:52
Is Samacsys:N最大集电极电流 (IC):0.2 A
基于收集器的最大容量:3 pF集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):700 MHz
Base Number Matches:1

MMBT5771 数据手册

 浏览型号MMBT5771的Datasheet PDF文件第2页浏览型号MMBT5771的Datasheet PDF文件第3页浏览型号MMBT5771的Datasheet PDF文件第4页 
Discrete POWER & Signal  
Technologies  
2N5771  
MMBT5771  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 3R  
E
PNP Switching Transistor  
This device is designed for very high speed saturate switching at  
collector currents to 100 mA. Sourced from Process 65. See  
PN4258 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
15  
15  
V
V
4.5  
V
Collector Current - Continuous  
200  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5771  
*MMBT5771  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
357  
556  
Rθ  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

MMBT5771 替代型号

型号 品牌 替代类型 描述 数据表
MMBT5771 ONSEMI

类似代替

PNP 开关晶体管
MMBT4403LT1G ONSEMI

功能相似

Switching Transistor(PNP Silicon)
MMBT2907ALT1G ONSEMI

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