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MMBT4403LT1G PDF预览

MMBT4403LT1G

更新时间: 2024-01-30 17:09:38
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关小信号双极晶体管光电二极管PC
页数 文件大小 规格书
8页 150K
描述
Switching Transistor(PNP Silicon)

MMBT4403LT1G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.06
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

MMBT4403LT1G 数据手册

 浏览型号MMBT4403LT1G的Datasheet PDF文件第2页浏览型号MMBT4403LT1G的Datasheet PDF文件第3页浏览型号MMBT4403LT1G的Datasheet PDF文件第4页浏览型号MMBT4403LT1G的Datasheet PDF文件第5页浏览型号MMBT4403LT1G的Datasheet PDF文件第6页浏览型号MMBT4403LT1G的Datasheet PDF文件第7页 
MMBT4403LT1  
Switching Transistor  
PNP Silicon  
Features  
Pb−Free Package is Available  
http://onsemi.com  
MAXIMUM RATINGS  
COLLECTOR  
3
Rating  
CollectorEmitter Voltage  
Symbol  
Value  
−40  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
1
CollectorBase Voltage  
−40  
Vdc  
BASE  
EmitterBase Voltage  
−5.0  
−600  
Vdc  
2
Collector Current − Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
EMITTER  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board (Note 1)  
T = 25°C  
A
P
D
225  
mW  
3
SOT−23 (TO−236)  
CASE 318−08  
STYLE 6  
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
1
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
2
Total Device Dissipation  
P
D
Alumina Substrate, (Note 2)  
T = 25°C  
A
2.4  
mW/°C  
MARKING DIAGRAM  
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
55 to  
+150  
stg  
2T D  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
2T = Specific Device Code  
D = Date Code  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
September, 2004 − Rev. 3  
MMBT4403LT1/D  

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