Datasheet > MMBT56

MMBT56

更新时间： 2024-09-09 01:25:11

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
3页	2197K
描述
SOT-23 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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MMBT56 数据手册

MMBTA56

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( P NP )

Features

SOT- 23

●

General Purpose Amplifier Applications

Marking:

●

2GM

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-80

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-4

Collector Current

-500

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

225

P_C

R_ΘJA

T_j

555

150

℃/W

℃

Storage Temperature

T_stg

-55～+150

℃

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=-100µA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-100µA, I_C=0

-80

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-80

-4

I_CBO

I_CEO

V_CB=-80V, I_E=0

-0.1

400

µA

V_CE=-60V, I_B=0

Collector cut-off current

I_EBO

V_EB=-4V, I_C=0

Emitter-base breakdown voltage

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-1V, I_C=-10mA

V_CE=-1V, I_C=-100mA

I_C=-100mA, I_B=-10mA

V_CE=-1V, I_C=-100mA

V_CE=-1V,I_C=-100mA, f=100MHz

100

DC current gain

-0.25

-1.2

Collector-emitter saturation voltage

Base-emitter voltage

f_T

MHz

Transition frequency

igh Diode Semiconductor

12 3

中文翻译

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