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MMBT5658AM-Q PDF预览

MMBT5658AM-Q

更新时间: 2024-11-18 19:46:35
品牌 Logo 应用领域
固锝 - GOOD-ARK /
页数 文件大小 规格书
4页 383K
描述
Small Signal Bipolar Transistor,

MMBT5658AM-Q 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.74峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MMBT5658AM-Q 数据手册

 浏览型号MMBT5658AM-Q的Datasheet PDF文件第2页浏览型号MMBT5658AM-Q的Datasheet PDF文件第3页浏览型号MMBT5658AM-Q的Datasheet PDF文件第4页 
MMBT5658AM  
NPN Transistor  
3
Features  
Low COb  
1
Complementery PNP available  
2
SOT-723 plastic-encapsulate package  
SOT-723  
RoHS compliant  
1. BASE  
2. EMITTER  
3. COLLECTOR  
Applications  
and Switching  
Ideal for General Purpose Amplification  
=25°C  
Maximum Ratings (TA  
unless otherwise specified)  
Rating  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Symbol  
Unit  
VCBO  
VCEO  
60  
50  
7
V
V
Emitter-Base Voltage  
VEBO  
IC  
V
Collector Current -Continuous  
Collector Dissipation  
150  
mA  
mW  
°C  
°C  
PC  
100  
-55 to +150  
TJ  
Junction Temperature  
Storage Temperature  
TSTG  
-55 to +150  
Electrical Characteristics (TA=25°C unless otherwise specified)  
Parameter  
Unit  
Symbol  
Test Conditions  
IC=50μA,IE=0  
Min  
Typ  
Max  
-
-
-
-
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
60  
50  
7
IC=1mA,IB=0  
-
-
-
-
-
-
V
IE=50μA,IC=0  
V
-
VCB=60V,IE=0  
0.1  
0.1  
560  
0.4  
-
μA  
μA  
-
Emitter Cut-off Current  
IEBO  
VEB=7V,IC=0  
DC Current Transfer Ratio  
Collector-Emitter Saturation Voltage  
Transition Frequency  
hFE  
VCE=6V,IC=1mA  
IC=50mA,IB=5mA  
VCE=12V,IC=2mA, f=100MHz  
VCB=12V,IE=0, f=1MHz  
120  
-
VCE(sat)  
fT  
V
MHz  
pF  
180  
-
-
-
Output Capacitance  
Cob  
3.5  
Classification of hFE  
Q
R
180 to 390  
BR  
S
Rank  
270 to 560  
120 to 270  
BQ  
Range  
Marking  
BS  
1/4  

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