WILLAS
MMBT555xLT1
High Voltage Transistors
DEVICE MARKING AND ORDERING INFORMATION
FEATURE
We declare that the material of product
compliance with RoHS requirements.
ƽ
Device
Marking
Shipping
Pb-Free package is available
M MBT5550LT1
M1F
3000/Tape&Reel
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
MMBT5551LT1
G1
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectorꢀ-ꢀEmitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
MMBT5550
MMBT5551
140
160
Collectorꢀ-ꢀBase Voltage
Vdc
MMBT5550
MMBT5551
160
180
SOT–23
Emitterꢀ-ꢀBase Voltage
6.0
Vdc
3
Collector Current - Continuous
I
600
mAdc
C
COLLECTOR
THERMAL CHARACTERISTICS
1
BASE
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225
mW
2
TA
= 25°C
EMITTER
Derate above 25°C
1.8
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
θJA
556
P
D
300
mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
T
J
, Tstg
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
Vdc
(I C = 1.0 mAdc, I B = 0)
M MBT5550
140
160
—
—
M MBT5551
Collector–Base Breakdown Voltage
V (BR)CBO
Vdc
Vdc
(I C = 100 µAdc, I E = 0)
M MBT5550
M MBT5551
160
180
—
—
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 100Vdc, I E = 0)
( V CB = 120Vdc, I E = 0)
V (BR)EBO
I CBO
6.0
—
M MBT5550
M MBT5551
—
—
—
—
100
50
nAdc
( V CB = 100Vdc, I E = 0, T A=100 °C) M MBT5550
( V CB = 120Vdc, I E = 0, T A=100 °C) M MBT5551
Emitter Cutoff Current
100
50
µAdc
I EBO
—
50
nAdc
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
2012-11
WILLAS ELECTRONIC CORP.