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MMBT555XLT1 PDF预览

MMBT555XLT1

更新时间: 2024-11-21 12:23:55
品牌 Logo 应用领域
威伦 - WILLAS 晶体晶体管
页数 文件大小 规格书
5页 366K
描述
High Voltage Transistors

MMBT555XLT1 数据手册

 浏览型号MMBT555XLT1的Datasheet PDF文件第2页浏览型号MMBT555XLT1的Datasheet PDF文件第3页浏览型号MMBT555XLT1的Datasheet PDF文件第4页浏览型号MMBT555XLT1的Datasheet PDF文件第5页 
WILLAS  
MMBT555xLT1  
High Voltage Transistors  
DEVICE MARKING AND ORDERING INFORMATION  
FEATURE  
We declare that the material of product  
compliance with RoHS requirements.  
ƽ
Device  
Marking  
Shipping  
Pb-Free package is available  
M MBT5550LT1  
M1F  
3000/Tape&Reel  
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
MMBT5551LT1  
G1  
3000/Tape&Reel  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collectorꢀ-ꢀEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MMBT5550  
MMBT5551  
140  
160  
Collectorꢀ-ꢀBase Voltage  
Vdc  
MMBT5550  
MMBT5551  
160  
180  
SOT–23  
Emitterꢀ-ꢀBase Voltage  
6.0  
Vdc  
3
Collector Current - Continuous  
I
600  
mAdc  
C
COLLECTOR  
THERMAL CHARACTERISTICS  
1
BASE  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
P
D
225  
mW  
2
TA  
= 25°C  
EMITTER  
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
θJA  
556  
P
D
300  
mW  
Alumina Substrate, (2) T  
A
= 25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
θJA  
T
J
, Tstg  
–55 to +150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage(3)  
V (BR)CEO  
Vdc  
(I C = 1.0 mAdc, I B = 0)  
M MBT5550  
140  
160  
M MBT5551  
Collector–Base Breakdown Voltage  
V (BR)CBO  
Vdc  
Vdc  
(I C = 100 µAdc, I E = 0)  
M MBT5550  
M MBT5551  
160  
180  
Emitter–Base Breakdown Voltage  
(I E = 10 µAdc, I C = 0)  
Collector Cutoff Current  
( V CB = 100Vdc, I E = 0)  
( V CB = 120Vdc, I E = 0)  
V (BR)EBO  
I CBO  
6.0  
M MBT5550  
M MBT5551  
100  
50  
nAdc  
( V CB = 100Vdc, I E = 0, T A=100 °C) M MBT5550  
( V CB = 120Vdc, I E = 0, T A=100 °C) M MBT5551  
Emitter Cutoff Current  
100  
50  
µAdc  
I EBO  
50  
nAdc  
( V BE = 4.0Vdc, I C= 0)  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.  
2012-11  
WILLAS ELECTRONIC CORP.  

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