Datasheet > MMBT5551LT1

MMBT5551LT1

更新时间： 2024-11-18 10:52:27

品牌	Logo	应用领域
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页数	文件大小	规格书
3页	36K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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MMBT5551LT1 数据手册

TIGER ELECTRONIC CO.,LTD

MMBT5551LT1

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The MMBT5551LT1 is designed for general purpose applications

requiring high Breakdown Voltages.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature..................................................................................................-55+150°C

Junction Temperature........................................................................... ..........+150°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................250 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage. .......................................................................................180 V

VCEO Collector to Emitter Voltage.....................................................................................160 V

VEBO Emitter to Base Voltage ...............................................................................................6 V

IC Collector Current........................................................................ .................................600mA

(Ta=25°C)

Characteristics

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min.

180

160

Typ.

Max.

Unit

Test Conditions

IC=100uA

IC=1.0mA

IE=10uA

0.15

0.2

250

300

VCB=120V

VEB=4V

IEBO

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

hFE1

IC=10mA, IB=1.0mA

IC=50mA, IB=5mA

IC=10mA, IB=1mA

IC=50mA, IB=5mA

VCE=5V, IC=1mA

VCE=5V, IC=10mA

VCE=5V, IC=50mA

IC=10mA, VCE=10V, f=100MHz

VCB=10V, f=1MHz

100

hFE2

hFE3

Cob

MHz

TIGER ELECTRONIC CO.,LTD

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中文翻译

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