Datasheet > MMBT5551W

MMBT5551W

更新时间： 2024-02-02 07:59:11

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	175K
描述
Plastic-Encapsulate Transistor

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中文翻译

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数据手册

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MMBT5551W 数据手册

MMBT5551W

NPN Silicon

Plastic-Encapsulate Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-323

FEATURE

ꢀ

Ideal for Medium Power Amplification and Switching

Also Available in Lead Free Version

Complementary to MMBT5401W

Top View

C B

Collector

MARKING: K4N

Millimeter

Min. Max.

0.100 REF.

0.525 REF.

REF.

Min.

Max.

2.20

2.45

1.35

1.10

1.40

0.40

1.80

1.15

0.80

1.20

0.20

Base

0.08

0.25

0.650 TYP.

Emitter

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Collector to Base Voltage

SYMBOL

V_CBO

RATINGS

UNIT

180

Collector to Emitter Voltage

V_CEO

160

Emitter to Base Voltage

Collector Current-Continuous

Collector Power Dissipation

Thermal Resistance, Junction to Ambient

Opterating & Storage Temperature

V_EBO

I_C

P_C

R_θJA

200

°C/W

°C

625

T_J, T_STG

150, -55 ~ 150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

CHARACTERISTIC

SYMBOL

MIN

180

160

MAX

UNIT

TEST CONDITION

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100µA, I_E=0

I_C= 1mA, I_B= 0

I_E=10µA, I_C=0

V_CB=120V, I_E=0

V_EB=4V, I_C=0

Emitter Cutoff Current

I_EBO

h_FE1

h_FE2

h_FE3

V_CE(sat)

V_BE(sat)

f_T

V_CE=5V, I_C=1mA

V_CE=5V, I_C=10mA

V_CE=5V, I_C=50mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

V_CE=10V, I_C=10mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

DC Current Gain

250

0.15

0.2

300

MHz

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

100

C_ob

_CE=5V, I_C=0.2mA, f=1KHz,

Noise Figure

R_S=1KΩ

01-Dec-2009 Rev. A

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