Datasheet > MMBT5551Q

MMBT5551Q

更新时间： 2024-11-19 15:19:31

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	312K
描述
SOT-23

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBT5551Q 数据手册

RoHS

COMPLIANT

MMBT5551Q

NPN General Purpose Amplifier

Features

● Epoxy meets UL-94 V-0 flammability rating and halogen free

● Moisture Sensitivity Level 1

● High Voltage Transistors NPN Silicon

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● Linear amplification

Mechanical Data

●

: SOT-23

Case

● Terminals: Tin plated leads, solderable per J-STD-002

and JESD22-B102

●

Marking: G1

Maximum Ratings (Ta=25℃unless otherwise noted)

■

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Unit

Conditions

Value

180

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

160

6.0

Collector Current -Continuous

℃/W

℃

600

Total Device Dissipation ^(*)

P_D

300

Thermal Resistance From Junction To

R_θJA

T_j

417

(*)

Ambient

Maximum Junction Temperature

Storage Temperature

150

T_STG

-55 to +150

℃

(*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch.

1 / 5

S-S2210

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,13-Apr-22

12 3 4 5

中文翻译

下载PDF

与MMBT5551Q相关器件

型号	品牌	获取价格	描述	数据表
MMBT5551S	SWST	获取价格	小信号晶体管
MMBT5551T	FOSHAN	获取价格	SOT-89
MMBT5551-TP	MCC	获取价格	PNP Plastic Encapsulate Transistor
MMBT5551-TP-HF	MCC	获取价格	暂无描述
MMBT5551W	SECOS	获取价格	Plastic-Encapsulate Transistor
MMBT5551W	SWST	获取价格	小信号晶体管
MMBT5551W	FOSHAN	获取价格	SOT-323
MMBT5551WT1	WILLAS	获取价格	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT5551-X-AE3-6-R	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5551-X-AE3-R	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR