Datasheet > MMBT5551LT1

MMBT5551LT1

更新时间： 2024-11-18 04:39:27

品牌	Logo	应用领域
AVICTEK		晶体晶体管
页数	文件大小	规格书
1页	35K
描述
SOT-23 Plastic-Encapsulate Transistors

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中文翻译

获取价格

数据手册

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MMBT5551LT1 数据手册

@vic SOT-23 Plastic-Encapsulate Transistors

MMBT5551LT1 TRANSISTOR (NPN)

SOT-23

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

Power dissipation

P_CM:

0.3

W (Tamb=25℃)

2. 4

1. 3

Collector current

I_CM:

0.6

Collector-base voltage

V_(BR)CBO

180

Operating and storage junction temperature range

Unit: mm

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

180

160

Ic= 100µA, I_E=0

Ic= 0.1mA, I_B=0

I_E= 100µA, I_C=0

V_CB=180V, I_E=0

0.1

µA

Emitter cut-off current

I_EBO

V_EB= 4V, I_C=0

h_FE(1)

V_CE= 5V, I_C= 1mA

V_CE= 5V, I_C=10mA

V_CE= 5V, I_C=50mA

I_C=50 mA, I_B= 5mA

I_C= 50 mA, I_B= 5mA

V_CE=10V, I_C= 10mA, f=100MHz

DC current gain

h_FE(2)

250

h_FE(3)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.5

MHz

DEVICE MARKING

MMBT5551LT1=G1

中文翻译

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