5秒后页面跳转
MMBT3904LT3G PDF预览

MMBT3904LT3G

更新时间: 2024-11-28 22:54:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 105K
描述
General Purpose Transistor (NPN Silicon)

MMBT3904LT3G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:10 weeks风险等级:0.57
Samacsys Description:Transistor NPN 40V 200mA SOT-23 ON Semi MMBT3904LT3G NPN Bipolar Transistor, 900 mA 40 V, 3-Pin SOT-23最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 ns

MMBT3904LT3G 数据手册

 浏览型号MMBT3904LT3G的Datasheet PDF文件第2页浏览型号MMBT3904LT3G的Datasheet PDF文件第3页浏览型号MMBT3904LT3G的Datasheet PDF文件第4页浏览型号MMBT3904LT3G的Datasheet PDF文件第5页浏览型号MMBT3904LT3G的Datasheet PDF文件第6页 
MMBT3904LT1  
Preferred Device  
General Purpose Transistor  
NPN Silicon  
Features  
Pb−Free Packages are Available  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
Symbol Value  
Unit  
Vdc  
V
V
V
40  
60  
CEO  
CBO  
EBO  
1
BASE  
Vdc  
EmitterBase Voltage  
6.0  
200  
Vdc  
2
Collector Current − Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
EMITTER  
Symbol  
Max  
Unit  
MARKING  
DIAGRAM  
Total Device Dissipation FR5 Board  
P
D
225  
mW  
3
(Note 1) T = 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
1
1AM  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
R
q
JA  
2
P
D
SOT−23 (TO−236)  
CASE 318  
Alumina Substrate, (Note 2) T = 25°C  
Derate above 25°C  
A
2.4  
mW/°C  
°C/W  
°C  
Style 6  
Thermal Resistance Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
q
JA  
1AM  
= Specific Device Code  
T , T  
J
55 to  
+150  
stg  
ORDERING INFORMATION  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Device  
MMBT3904LT1  
Package  
Shipping  
SOT−23  
3000 / Tape & Reel  
3000 / Tape & Reel  
MMBT3904LT1G SOT−23  
MMBT3904LT3  
SOT−23 10000 / Tape & Reel  
MMBT3904LT3G SOT−23 10000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
February, 2004 − Rev. 5  
MMBT3904LT1/D  
 

MMBT3904LT3G 替代型号

型号 品牌 替代类型 描述 数据表
SMMBT3904LT1G ONSEMI

类似代替

General Purpose Transistor
MMBT3904 ONSEMI

类似代替

GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
MMBT3904LT1G ONSEMI

类似代替

General Purpose Transistor (NPN Silicon)

与MMBT3904LT3G相关器件

型号 品牌 获取价格 描述 数据表
MMBT3904M CJ

获取价格

TRANSISTOR
MMBT3904M CJ

获取价格

SOT-723
MMBT3904M BL Galaxy Electrical

获取价格

40V,0.2A,General Purpose NPN Bipolar Transistor
MMBT3904M3 YANGJIE

获取价格

SOT-723
MMBT3904N TC

获取价格

SOT-883
MMBT3904Q DIODES

获取价格

NPN, 40V, 0.2A, SOT23
MMBT3904Q YANGJIE

获取价格

SOT-23
MMBT3904-Q NEXPERIA

获取价格

40 V, 200 mA NPN switching transistorProduction
MMBT3904Q-7-F DIODES

获取价格

40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT3904R BL Galaxy Electrical

获取价格

40V,0.2A,General Purpose NPN Bipolar Transistor