Datasheet > MMBT3904N

MMBT3904N

更新时间： 2024-12-01 17:15:31

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
4页	201K
描述
SOT-883

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中文翻译

获取价格

数据手册

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MMBT3904N 数据手册

TAK CHEON

^®

SEMICONDUCTOR

SOT-883 General Purpose Transistor

NPN Silicon

Surface Mount Plastic Package

Green Product

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

200

°C /W

°C

Power Dissipation

(FR-4 Board – minimum pad 25°C)

P_D

200

SOT-883 (DFN1006-3)

R_θJA

T_JT_STG

Thermal Resistance from Junction to Ambient

Junction & Storage Temperature Range

500

-55 to +150

These ratings are limiting values above which the serviceability of the device may be impaired.

Specification Features:

§ DFN1006-3

Electrical Symbol:

Device Marking Code:

Device Type

Marking

Shipping

§ Simplifies Circuit Design

MMBT3904N3

10,000/Reel

§ RoHS Compliant

§ Green EMC

§ Matte Tin(Sn) Lead Finish

§ Weight: approx. 0.001g

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Off Characteristics

Limits

Unit

Symbol

Parameter

Test Condition

Min

Max

Collector-Emitter Breakdown Voltage

(Note 1)

V_(BR)CEO

Volts

I_C=1mA, I_B=0A

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_C=10uA, I_E=0A

I_E=10uA, I_B=0A

V_CB=60V, I_E=0A

V_CE=30V, V_EB=3V

VEB= 5V , IC=0A

Volts

0.1

I_CEX

Collector Cutoff Current

Emitter Cutoff Current

I_EBO

Note 1: Pulse Test. Pulse width <300us, Duty cycle < 2.0%)

Number: DB-324

Jul 2020,Revision A

Page 1

12 3 4

中文翻译

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