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MMBT3904T PDF预览

MMBT3904T

更新时间： 2024-11-30 04:39:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
4页 141K
描述
NPN Epitaxial Silicon Transistor

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中文翻译

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MMBT3904T 数据手册

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February 2008  
MMBT3904T  
NPN Epitaxial Silicon Transistor  
Features  
C
• General purpose amplifier transistor.  
• Ultra-Small Surface Mount Package for all types.  
• Suitable for general switching & amplification  
• Well suited for portable application  
E
B
Marking : A04  
SOT-523F  
• As complementary type, PNP MMBT3906T is recommended  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
VCBO  
Parameter  
Collector-Base Voltage  
Value  
60  
Unit  
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
40  
V
6
V
200  
mA  
°C  
°C  
TJ  
Junction Temperature  
150  
TSTG  
Storage Temperature Range  
-55 ~ 150  
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics* Ta=25°C unless otherwise noted  
Symbol  
PC  
Parameter  
Collector Power Dissipation, by RθJA  
Thermal Resistance, Junction to Ambient  
Max  
250  
Unit  
mW  
RθJA  
500  
°C/W  
* Minimum land pad.  
Electrical Characteristics* Ta=25°C unless otherwise noted  
Symbol  
BVCBO  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
IC = 10μA, IE = 0  
Min.  
60  
Max.  
Unit  
V
BVCEO  
BVEBO  
ICEX  
IC = 1mA, IB = 0  
40  
V
IE = 10μA, IC = 0  
6
V
VCE = 60V, VEB(OFF) = 3V  
50  
nA  
hFE  
DC Current Gain  
VCE = 1V, IC = 0.1mA  
VCE = 1V, IC = 1mA  
VCE = 1V, IC = 10mA  
VCE = 1V, IC = 50mA  
VCE = 1V, IC = 100mA  
40  
70  
100  
60  
300  
30  
VCE (sat)  
VBE (sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
IC = 10mA, IB = 1mA  
IC = 50mA, IB = 5mA  
0.2  
0.3  
V
V
IC = 10mA, IB = 1mA  
IC = 50mA, IB = 5mA  
0.65  
300  
0.85  
0.95  
V
V
fT  
Current Gain Bandwidth Product  
Output Capacitance  
Input Capacitance  
Delay Time  
VCE = 20V, IC = 10mA, f = 100MHz  
VCB = 5V, IE = 0, f = 1MHz  
MHz  
pF  
pF  
ns  
Cob  
Cib  
td  
6
15  
35  
35  
200  
50  
VEB = 0.5V, IC = 0, f = 1MHz  
VCC = 3V, IC = 10mA  
IB1 =- IB2 = 1mA  
tr  
Rise Time  
ns  
ts  
Storage Time  
ns  
tf  
Fall Time  
ns  
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%  
© 2007 Fairchild Semiconductor Corporation  
MMBT3904T Rev. 1.0.0  
www.fairchildsemi.com  
1
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MMBT3904T 替代型号

型号 品牌 替代类型 描述 数据表
CMUT3904 CENTRAL

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