MMBT3904T

更新时间： 2024-02-18 17:28:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	141K
描述
NPN Epitaxial Silicon Transistor

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技术参数
数据手册

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MMBT3904T 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MMBT3904T 数据手册

February 2008

MMBT3904T

NPN Epitaxial Silicon Transistor

Features

• General purpose amplifier transistor.

• Ultra-Small Surface Mount Package for all types.

• Suitable for general switching & amplification

• Well suited for portable application

Marking : A04

SOT-523F

• As complementary type, PNP MMBT3906T is recommended

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

Unit

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

200

°C

T_J

Junction Temperature

150

T_STG

Storage Temperature Range

-55 ~ 150

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics* T_a=25°C unless otherwise noted

Symbol

P_C

Parameter

Collector Power Dissipation, by R_θJA

Thermal Resistance, Junction to Ambient

Max

250

Unit

R_θJA

500

°C/W

* Minimum land pad.

Electrical Characteristics* T_a=25°C unless otherwise noted

Symbol

BV_CBO

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

I_C= 10μA, I_E= 0

Min.

Max.

Unit

BV_CEO

BV_EBO

I_CEX

I_C= 1mA, I_B= 0

I_E= 10μA, I_C= 0

V_CE= 60V, V_EB(OFF)= 3V

h_FE

DC Current Gain

V_CE= 1V, I_C= 0.1mA

V_CE= 1V, I_C= 1mA

V_CE= 1V, I_C= 10mA

V_CE= 1V, I_C= 50mA

V_CE= 1V, I_C= 100mA

100

300

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

I_C= 10mA, I_B= 1mA

I_C= 50mA, I_B= 5mA

0.2

0.3

I_C= 10mA, I_B= 1mA

I_C= 50mA, I_B= 5mA

0.65

300

0.85

0.95

f_T

Current Gain Bandwidth Product

Output Capacitance

Input Capacitance

Delay Time

V_CE= 20V, I_C= 10mA, f = 100MHz

V_CB= 5V, I_E= 0, f = 1MHz

MHz

C_ob

C_ib

t_d

200

V_EB= 0.5V, I_C= 0, f = 1MHz

V_CC= 3V, I_C= 10mA

I_B1=- I_B2= 1mA

t_r

Rise Time

t_s

Storage Time

t_f

Fall Time

* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%

MMBT3904T Rev. 1.0.0

www.fairchildsemi.com

12 3 4

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