MMBT3904W
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
SOT-323(SC-70)
·
·
Epitaxial Planar Die Construction
Dim
Min
Max
A
L
Complementary PNP Type Available
(MMBT3906W)
A
B
C
D
G
H
J
1.800 2.200
1.150 1.350
0.800 1.000
0.300 0.400
1.200 1.400
0.000 0.100
0.100 0.250
0.350 0.500
0.590 0.720
2.000 2.400
0.280 0.420
3
·
Ideal for Medium Power Amplification and
Switching
S
C
Top View
B
1
2
COLLECTOR
3
V
G
3
1
1
BASE
K
L
S2C-70
H
J
D
K
SOT-323
2
S
V
EMITTER
MAXIMUM RATINGS
Rating
All Dimension in mm
Symbol
Value
40
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
60
Vdc
6.0
Vdc
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
I
200
mAdc
C
Symbol
Max
Unit
(1)
Total Device Dissipation FR–5 Board
P
200
mW
D
T
= 25°C
A
Derate above 25°C
1.6
625
300
mW/°C
°C/W
mW
Thermal Resistance Junction to Ambient
Total Device Dissipation
R
JA
D
P
(2)
Alumina Substrate,
T
A
= 25°C
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
417
JA
T , T
J stg
–55 to +150
MMBT3904W = 1A, K2N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (3)
V
V
40
60
6.0
—
—
—
—
50
50
Vdc
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
C
B
Collector–Base Breakdown Voltage
(I = 10 Adc, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
Vdc
(BR)EBO
E
C
Base Cutoff Current
(V = 30 Vdc, V
I
nAdc
nAdc
BL
= 3.0 Vdc)
CE EB
Collector Cutoff Current
(V = 30 Vdc, V
I
—
CEX
= 3.0 Vdc)
CE EB
REM : Thermal Clad is a registered trademark of the Berquist Company.
1. FR–5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3
3. Pulse Test: Pulse Width
0.024 in. 99.5% alumina.
300 s, Duty Cycle
2.0%.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2007 Rev. B
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