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MMBT3904W PDF预览

MMBT3904W

更新时间: 2024-02-02 15:27:58
品牌 Logo 应用领域
SECOS 晶体晶体管开关光电二极管
页数 文件大小 规格书
6页 419K
描述
General Purpose Transistor

MMBT3904W 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.58
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MMBT3904W 数据手册

 浏览型号MMBT3904W的Datasheet PDF文件第2页浏览型号MMBT3904W的Datasheet PDF文件第3页浏览型号MMBT3904W的Datasheet PDF文件第4页浏览型号MMBT3904W的Datasheet PDF文件第5页浏览型号MMBT3904W的Datasheet PDF文件第6页 
MMBT3904W  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
FEATURES  
SOT-323(SC-70)  
·
·
Epitaxial Planar Die Construction  
Dim  
Min  
Max  
A
L
Complementary PNP Type Available  
(MMBT3906W)  
A
B
C
D
G
H
J
1.800 2.200  
1.150 1.350  
0.800 1.000  
0.300 0.400  
1.200 1.400  
0.000 0.100  
0.100 0.250  
0.350 0.500  
0.590 0.720  
2.000 2.400  
0.280 0.420  
3
·
Ideal for Medium Power Amplification and  
Switching  
S
C
Top View  
B
1
2
COLLECTOR  
3
V
G
3
1
1
BASE  
K
L
S2C-70  
H
J
D
K
SOT-323  
2
S
V
EMITTER  
MAXIMUM RATINGS  
Rating  
All Dimension in mm  
Symbol  
Value  
40  
Unit  
Vdc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
60  
Vdc  
6.0  
Vdc  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
200  
mAdc  
C
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
200  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.6  
625  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
T
A
= 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
°C  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
417  
JA  
T , T  
J stg  
55 to +150  
MMBT3904W = 1A, K2N  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage (3)  
V
V
40  
60  
6.0  
50  
50  
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Base Cutoff Current  
(V = 30 Vdc, V  
I
nAdc  
nAdc  
BL  
= 3.0 Vdc)  
CE EB  
Collector Cutoff Current  
(V = 30 Vdc, V  
I
CEX  
= 3.0 Vdc)  
CE EB  
REM : Thermal Clad is a registered trademark of the Berquist Company.  
1. FR5 = 1.0  
0.75 0.062 in.  
2. Alumina = 0.4 0.3  
3. Pulse Test: Pulse Width  
0.024 in. 99.5% alumina.  
300 s, Duty Cycle  
2.0%.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2007 Rev. B  
Page 1 of 6  

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