Datasheet > 晶体管 > 小信号双极晶体管> MMBT3904T-TP

MMBT3904T-TP

更新时间： 2024-01-13 03:53:01

品牌	Logo	应用领域
美微科 - MCC		放大器
页数	文件大小	规格书
3页	110K
描述
150mW NPN General Purpose Amplifier

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MMBT3904T-TP 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MMBT3904T-TP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBT3904T

Micro Commercial Components

Features

150mW

•

Case Material:Molded Plastic. UL Flammability

Classificatio Rating 94-0 and MSL Rating 1

xꢀ Collector Current: 0.2A

NPN General

xꢀ Operating and Storage Junction Temperatures: -55ć to 150ć

Marking:1N

Purpose Amplifier

Electrical Characteristics @ 25qC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

SOT-523

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage*

(I_C=1.0mAdc, I_B=0)

Vdc

Collector-Base Breakdown Voltage

(I_C=10PAdc, I_E=0)

Emitter-Base Breakdown Voltage

6.0

Vdc

(I_E=10PAdc, I_C=0)

Collector Cut-off Current

(V_CB=30Vdc, I_E=0)

nAdc

I_EBO

Emitter Cut-off Current

(V_EB=5Vdc, I_C=0)

ON CHARACTERISTICS

h_FE

DC Current Gain*

(I_C=0.1mAdc, V_CE=1.0Vdc)

(I_C=1.0mAdc, V_CE=1.0Vdc)

(I_C=10mAdc, V_CE=1.0Vdc)

(I_C=50mAdc, V_CE=1.0Vdc)

(I_C=100mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1.0mAdc)

(I_C=50mAdc, I_B=5.0mAdc)

Base-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1.0mAdc)

(I_C=50mAdc, I_B=5.0mAdc)

100

300

V_CE(sat)

DIMENSIONS

INCHES

0.2

0.3

Vdc

DIM

MIN

.059

.030

.057

.020 Nominal

.035

.000

.028

.004

.010

MAX

.067

.033

.069

MIN

1.50

0.75

1.45

MAX

1.70

0.85

1.75

NOTE

V_BE(sat)

0.65

300

0.85

0.95

0.50Nominal

0.90

SMALL-SIGNAL CHARACTERISTICS

.043

.004

.031

.008

.014

1.10

f_T

Current Gain-Bandwidth Product

(I_C=10mAdc, V_CE=20Vdc, f=100MHz)

Output Capacitance

(V_CB=5.0Vdec, I_E=0, f=1.0MHz)

Noise Figure

.000

.70

.100

.25

.100

0.80

.200

.35

MHz

C_obo

4.0

5.0

(I_C=100PAdc, V_CE=5.0Vdc, R_S=1.0k:

f=1MHz)

SWITCHING CHARACTERISTICS

t_d

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=3.0Vdc, V_BE=0.5Vdc

I_C=10mAdc, I_B1=1.0mAdc)

t_r

t_s

t_f

(V_CC=3.0Vdc, I_C=10mAdc

_B1=I_B2=1.0mAdc)

200

www.mccsemi.com

Revision: 4

2008/01/01

1 of 3

12 3

下载PDF

与MMBT3904T-TP相关器件

型号	品牌	描述	获取价格	数据表
MMBT3904T-TP-HF	MCC	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN	获取价格
MMBT3904W	PANJIT	NPN GENERAL PURPOSE SWITCHING TRANSISTOR	获取价格
MMBT3904W	TYSEMI	Pb?Free package is available	获取价格
MMBT3904W	SECOS	General Purpose Transistor	获取价格
MMBT3904W	SEMTECH	NPN Silicon Epitaxial Planar Transistor	获取价格
MMBT3904W	KEXIN	General Purpose Transistor	获取价格