Datasheet > MMBT3904TT1

MMBT3904TT1

更新时间： 2024-11-30 03:02:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
12页	128K
描述
General Purpose Transistors

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中文翻译

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数据手册
替代型号

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MMBT3904TT1 数据手册

MMBT3904TT1

General Purpose

Transistors

MMBT3904TT1 – NPN Silicon

This transistor is designed for general purpose amplifier

applications. It is housed in the SOT–416/SC–75 package which is

designed for low power surface mount applications.

http://onsemi.com

• Device Marking:

GENERAL PURPOSE

AMPLIFIER TRANSISTORS

SURFACE MOUNT

MMBT3904TT1 = AM

MAXIMUM RATINGS (T = 25°C)

MMBT3904TT1

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

COLLECTOR

CEO

Vdc

CBO

EBO

BASE

6.0

Vdc

Collector Current – Continuous

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

EMITTER

Symbol

Max

Unit

Total Device Dissipation,

(1)

FR–4 Board

= 25°C

200

Derated above 25°C

1.6

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

600

θJA

(1)

Total Device Dissipation,

(2)

CASE 463

SOT–416/SC–75

STYLE 1

FR–4 Board

= 25°C

300

Derated above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

400

θJA

(2)

DEVICE MARKING

Junction and Storage

Temperature Range

T , T

J stg

–55 to

+150

°C

(1) FR–4 @ Minimum Pad

(2) FR–4 @ 1.0 × 1.0 Inch Pad

See Table

ORDERING INFORMATION

Device

Package

Shipping

MMBT3904TT1

SOT–416 3000 / Tape & Reel

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

October, 2001 – Rev. 1

MMBT3904TT1/D

12 3 4 5 6 7...12

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MMBT3904TT1 替代型号

型号	品牌	替代类型	描述	数据表
MMBT3904T	ONSEMI	功能相似	200 mA, 40 V NPN Bipolar Junction Transistor
MMBT3904TT1G	ONSEMI	功能相似	General Purpose Transistors
CMUT3904	CENTRAL	功能相似	ULTRAmini.SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

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