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MMBT3904W PDF预览

MMBT3904W

更新时间: 2024-11-30 04:39:27
品牌 Logo 应用领域
WEITRON 晶体晶体管开关光电二极管
页数 文件大小 规格书
7页 364K
描述
General Purpose Transistor NPN Silicon

MMBT3904W 数据手册

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MMBT3904W  
COLLECTOR  
3
General Purpose Transistor  
NPN Silicon  
3
1
BASE  
1
2
2
EMITTER  
SOT-323(SC-70)  
Maximum Ratings  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base VOltage  
Symbol  
Value  
40  
60  
Unit  
Vdc  
Vdc  
V
CEO  
V
V
CBO  
6.0  
200  
Vdc  
mAdc  
EBO  
Collector Current-Continuous  
I
C
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
mW  
C/W  
C
P
D
Total Device Dissipation TA=25 C  
150  
833  
R
θ
Thermal Resistance, Junction to Ambient  
Junction and Storage, Temperature  
JA  
T
J,Tstg  
-55 to +150  
Device Marking  
MMBT3904W=AM  
(TA=25 C Unless Otherwise noted)  
Electrical Characteristics  
Characteristics  
Symbol  
Unit  
Min  
Max  
Off C haracteristics  
(2)  
-
-
-
Collector-Emitter Breakdown Voltage (I =1.0mAdc.IB=0)  
C
V(BR)CEO  
V(BR)CBO  
40  
60  
Vdc  
Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0)  
Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0)  
Vdc  
Vdc  
V(BR)EBO  
IBL  
6.0  
-
-
50  
50  
Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc)  
Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc)  
nAdc  
nAdc  
ICEX  
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.  
<
<
2. Pulse Test:Pulse Width 300uS, Duty Cycle 2.0%  
=
=
WEITRON  
http://www.weitron.com.tw  

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