Datasheet > MMBT3904T

MMBT3904T

更新时间： 2024-12-01 14:55:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	714K
描述
SOT-523

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中文翻译

获取价格

数据手册

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MMBT3904T 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate Transistors

MMBT3904T TRANSISTOR (NPN)

FEATURES

SOT–523

 Complementary to MMBT3906T

 Small Package

MARKING:

1N = Device code

1. BASE

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

2. EMITTER

3. COLLECTOR

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

200

150

833

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

℃/W

Operation Junction and

Storage Temperature Range

T_J,T_stg

℃

-55 +150

～

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=10µA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=10µA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CEX

I_EBO

V_CE=30V, V_EB(off)=3V

V_EB=5V, I_C=0

100

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

V_CE=1V, I_C=0.1mA

V_CE=1V, I_C=1mA

DC current gain

V_CE=1V, I_C=10mA

100

300

V_CE=1V, I_C=50mA

I_C=10mA, I_B=1mA

0.2

0.3

V_CE(sat)

Collector-emitter saturation voltage

I_C=50mA, I_B=5mA

I_C=10mA, I_B=1mA

0.65

300

0.85

0.95

V_BE(sat)

I_C=50mA, I_B=5mA

f_T

V_CE=20V,I_C=10mA, f=100MHz

V_CB=5V, I_E=0, f=1MHz

V_EB=0.5V, I_C=0, f=1MHz

V_CC=3V, V_BE(off)=-0.5V I_C=10mA,

I_B1=1mA

MHz

Transition frequency

C_ob

C_ib

Collector output capacitance

Base input capacitance

t_d

t_r

Delay time

Rise time

V_CC=3V, V_BE(off)=-0.5V I_C=10mA,

I_B1=1mA

t_s

t_f

V_CC=3V, I_C=10mA, I_B1= I_B2=1mA

200

Storage time

Fall time

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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