Datasheet > MMBT3904R

MMBT3904R

更新时间： 2024-04-09 19:02:54

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	365K
描述
40V,0.2A,General Purpose NPN Bipolar Transistor

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数据手册

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MMBT3904R 数据手册

NPN Silicon Epitaxial Planar Transistor

MMBT3904R

Features



Epitaxial planar die construction

Ideal for low power amplification and switching

Complementary PNP type available MMBT3906R

Mechanical Data



Case: SOT-223

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

1AM

MMBT3904R

4000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current –Peak Pulse Width

Peak Base Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

0.2

0.1

I_CM

I_BM

Thermal Characteristics

Parameter

Power Dissipation (Collector) ^*1

Thermal Resistance (Junction-to-Ambient)

Junction Temperature

Symbol

P_D

Value

1.15

Unit

C/W

°C

R_θJA

T_J

108

-55 ~ +150

Storage Temperature Range

T_STG

°C

Note1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm²

STM0429A: December 2023 [2.0]

www.gmesemi.com

12 3 4

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