Datasheet > MMBT3904T

MMBT3904T

更新时间： 2024-09-28 12:36:43

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
2页	135K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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MMBT3904T 数据手册

RoHS

MMBT3904T

SOT-523

MMBT3904T TRANSISTOR (NPN)

FEATURES

1. BASE

Power dissipation

2. EMITTER

3. COLLECTOR

P_CM:0.15

W (Tamb=25℃)

Collector current

I_CM:0.2

Collector-base voltage

V_(BR)CBO:60

Operating and storage junction temperature range

T_J,T_stg:-55℃ to +150℃

MARKING:1N

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=10µA,I_E=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=1mA,I_B=0

I_E=10µA,I_C=0

V_CB=30V,I_E=0

0.05

µA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

h_FE(1)

V_CE=1V,I_C=0.1mA

V_CE=1V,I_C=1mA

V_CE=1V,I_C=10mA

V_CE=1V,I_C=50mA

V_CE=1V,I_C=100mA

I_C=10mA,I_B=1mA

I_C=50mA,I_B=5mA

I_C=10mA,I_B=1mA

I_C=50mA,I_B=5mA

V_CE=20V,I_C=10mA,f=100MHz

h_FE(2)

DC current gain

h_FE(3)

100

300

h_FE(4)

h_FE(5)

V_CE(sat)1

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

f_T

0.2

0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.65

300

0.85

0.95

Transition frequency

MHz

Collector output capacitance

C_ob

V_CB=5V,I_E=0,f=1MHz

V_CE=5V,I_c=0.1mA,

f=1MHZ,Rg=1KΩ

Noise figure

Delay time

t_d

V_CC=3V, V_BE=0.5V

WEJ ELECTRONIC CO.,LTD

Rise time

Storage time

Fall time

200

t_r

t_S

t_f

I_C=10mA , I_B1=1mA

V_CC=3V, I_C=10mA

I_B1= I_B2= 1mA

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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