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MMBT3904T

更新时间: 2024-11-30 12:32:55
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 78K
描述
Ultra-Small Surface Mount Package

MMBT3904T 数据手册

  
Product specification  
MMBT3904T  
SOT-523  
Unit: mm  
+0.1  
1.6-0.1  
+0.1  
1.0-0.1  
Features  
+0.05  
+0.01  
0.2-0.05  
0.1-0.01  
Ultra-Small Surface Mount Package  
2
1
Complementary PNP Type Available(MMBT3906T)  
3
+0.25  
0.3-0.05  
+0.1  
0.5-0.1  
1. Base  
2. Emitter  
3. Collecter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
60  
Unit  
V
Collector - Emitter Voltage  
Emitter - Base Voltage  
40  
V
6
V
Collector Current - Continuous  
Collector Power Dissipation  
Thermal Resistance, Junction to Ambient (Note 1)  
Junction Temperature  
0.2  
A
PD  
150  
mW  
/W  
RθJA  
TJ  
833  
150  
Storage Temperature  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test conditons  
Min  
60  
40  
6
Typ Max  
Unit  
Collecto- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector cut-off current  
VCBO  
VCEO  
VEBO  
IcBO  
V
V
Ic= 10 μAIE=0  
Ic= 1 mAIB=0  
V
IE= 10μAIC=0  
VCB= 60 V , IE=0  
VCE= 30 V , VBE(off)=3V  
VEB= 5V , IC=0  
0.1  
50  
μA  
nA  
μA  
Collector cut-off current  
IcEO  
Emitter cut-off current  
IEBO  
0.1  
300  
VCE= 1V, IC= 10mA  
VCE= 1V, IC= 50mA  
100  
60  
DC current gain  
hFE  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Delay time  
VCE(sat) IC=50 mA, IB= 5mA  
VBE(sat) IC= 50 mA, IB= 5mA  
0.4  
0.95  
35  
V
V
td  
tr  
VCC=3.0V,VBE=-0.5V  
IC=10mA,IB1=-IB2=1.0mA  
VCC=3.0V,IC=10mA  
ns  
Rise time  
35  
Storage time  
ts  
tf  
200  
50  
ns  
Fall time  
IB1=-IB2=1.0mA  
Transition frequency  
fT  
VCE= 20V, IC= 10mA,f=100MHz  
300  
MHz  
Marking  
Marking  
1N  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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