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MMBT3904M PDF预览

MMBT3904M

更新时间: 2024-11-30 10:52:31
品牌 Logo 应用领域
江苏长电/长晶 - CJ 晶体晶体管
页数 文件大小 规格书
3页 145K
描述
TRANSISTOR

MMBT3904M 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

MMBT3904M 数据手册

 浏览型号MMBT3904M的Datasheet PDF文件第2页浏览型号MMBT3904M的Datasheet PDF文件第3页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
WBFBP-03B Plastic-Encapsulate Transistors  
C
MMBT3904M TRANSISTOR  
WBFBP-03B  
(1.2×1.2×0.5)  
unit: mm  
TOP  
DESCRIPTION  
NPN Epitaxial Silicon Transistor  
B
E
E
B
FEATURES  
C
1. BASE  
Epitaxial Planar Die Construction  
Complementary PNP Type Available (MMBT3906M)  
Ultra-Small Surface Mount Package  
Also Available in Lead Free Version  
2. EMITTER  
3. COLLECTOR  
BACK  
APPLICATION  
General Purpose Amplifier, switching  
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,  
DVD-ROM, Note book PC, etc.)  
MARKING:1N  
C
1N  
B
E
MAXIMUM RATINGS* TA=25unless otherwise noted  
Symbol  
Parameter  
Value  
60  
Units  
V
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
40  
V
6
V
Collector Current -Continuous  
Collector Dissipation  
0.2  
A
PC  
0.15  
150  
-55-150  
W
TJ  
Junction Temperature  
Storage Temperature  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=10µA,IE=0  
V(BR)CEO IC=1mA,IB=0  
V(BR)EBO IE=10µA,IC=0  
60  
40  
6
V
V
V
ICEX  
IEBO  
VCE=30V,VEB(off)=3V  
VEB=5V,IC=0  
0.05  
0.1  
µA  
µA  
Emitter cut-off current  
hFE(1)  
hFE(2)  
hFE(3)  
hFE(4)  
hFE(5)  
VCE=1V,IC=0.1mA  
VCE=1V,IC=1mA  
VCE=1V,IC=10mA  
VCE=1V,IC=50mA  
VCE=1V,IC=100mA  
40  
70  
DC current gain  
100  
60  
300  
30  
VCE(sat)1 IC=10mA,IB=1mA  
VCE(sat)2 IC=50mA,IB=5mA  
VBE(sat)1 IC=10mA,IB=1mA  
VBE(sat)2 IC=50mA,IB=5mA  
0.2  
0.3  
V
V
Collector-emitter saturation voltage  
0.65  
300  
0.85  
0.95  
V
Base-emitter saturation voltage  
Transition frequency  
V
fT  
VCE=20V,IC=10mA,f=100MHz  
MHz  

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