MMBT3904T

更新时间： 2024-11-30 10:52:31

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
7页	356K
描述
General Purpose NPN SiliconTransistor

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中文翻译

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数据手册

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MMBT3904T 数据手册

MMBT3904T

General Purpose NPN SiliconTransistor

COLLECTOR

P b

Lead(Pb)-Free

BASE

SC-89

SOT-523F

EMITTER

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

Value

Unit

Vdc

CEO

Vdc

CBO

Emitter-Base Voltage

EBO

6.0

Vdc

Collector Current-Continuous

mAdc

200

Thermal Characteristics

Characteristics

Symbol

Max

Unit

(1)

Total Device Dissipation FR-5 Board

TA=25°C

200

1.6

Derate above 25°C

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

θJA

600

300

Total Device Dissipation

(2)

Alumina Substrate, TA=25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Junction Temperature

400

θJA

-55 to +150

°C

Storage Temperature

stg

Device Marking

MMBT3904T=AM

(T =25 C Unless Otherwise noted)

Electrical Characteristics

Characteristics

Symbol

Unit

Min

Max

Off Characteristics

(3)

Collector-Emitter Breakdown Voltage (I =1.0mA ,I =0)

(BR)CEO

Collector-Base Breakdown Voltage (I =10 µA , I =0)

(BR)CBO

(BR)EBO

Emitter-Base Breakdown Voltage (I =10 µA , I =0)

6.0

Base Cutoff Current (V =30 V,V =3.0 V)

Collector Cutoff Current (V =30V,V =3.0V)

CEX

1. FR-4 Minimum Pad.

2. FR-4 1.0 x 1.0 Inch Pad.

3. Pulse Test : Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.

WEITRON

http://www.weitron.com.tw

1/7

28-Sep-09

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中文翻译

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