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MMBT2222ALT1 PDF预览

MMBT2222ALT1

更新时间: 2024-10-25 22:54:43
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管
页数 文件大小 规格书
8页 256K
描述
General Purpose Transistors

MMBT2222ALT1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.01Is Samacsys:N
最大集电极电流 (IC):0.6 A基于收集器的最大容量:8 pF
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):75JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:0.225 W认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
VCEsat-Max:1 VBase Number Matches:1

MMBT2222ALT1 数据手册

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Order this document  
by MMBT2222LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
COLLECTOR  
3
NPN Silicon  
*Motorola Preferred Device  
1
BASE  
2
3
EMITTER  
MAXIMUM RATINGS  
1
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
Symbol  
2222  
30  
2222A  
Unit  
Vdc  
2
V
CEO  
V
CBO  
V
EBO  
40  
75  
CASE 31808, STYLE 6  
SOT23 (TO236AB)  
60  
Vdc  
EmitterBase Voltage  
5.0  
6.0  
Vdc  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
600  
mAdc  
C
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
T
A
= 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
417  
JA  
T , T  
J stg  
55 to +150  
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage (I = 10 mAdc, I = 0)  
MMBT2222  
MMBT2222A  
V
V
30  
40  
Vdc  
Vdc  
Vdc  
C
B
(BR)CEO  
CollectorBase Breakdown Voltage (I = 10 Adc, I = 0)  
MMBT2222  
MMBT2222A  
60  
75  
C
E
(BR)CBO  
EmitterBase Breakdown Voltage (I = 10 Adc, I = 0)  
MMBT2222  
MMBT2222A  
V
(BR)EBO  
5.0  
6.0  
E
C
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= 60 Vdc, V  
= 3.0 Vdc)  
MMBT2222A  
I
10  
nAdc  
CE  
EB(off)  
CEX  
= 50 Vdc, I = 0)  
MMBT2222  
MMBT2222A  
MMBT2222  
MMBT2222A  
I
0.01  
0.01  
10  
µAdc  
CB  
E
CBO  
(V  
CB  
(V  
CB  
(V  
CB  
= 60 Vdc, I = 0)  
E
= 50 Vdc, I = 0, T = 125°C)  
E
A
A
= 60 Vdc, I = 0, T = 125°C)  
10  
E
Emitter Cutoff Current (V  
EB  
= 3.0 Vdc, I = 0)  
MMBT2222A  
MMBT2222A  
I
100  
20  
nAdc  
nAdc  
C
EBO  
Base Cutoff Current (V  
CE  
= 60 Vdc, V  
EB(off)  
= 3.0 Vdc)  
I
BL  
1. FR5 = 1.0  
0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996

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