Datasheet > MMBT2222AM

MMBT2222AM

更新时间： 2023-12-06 20:04:10

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1043K
描述
SOT-723

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数据手册

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MMBT2222AM 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-723 Plastic-Encapsulate Transistors

MMBT2222AM TRANSISTOR (NPN)

SOT-723

FEATURES

z Epitaxial planar die construction

1. BASE

2.EMITTER

3.COLLECTOR

MARKING: 1P

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted )

Symbol

V^CBO

V^CEO

VEBO

I^C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

0.5

P^C

Power Dissipation

100

R_ΘJA

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

1250

-55~+150

℃/W

℃

T_J,Tstg

℃

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=10μA, I_E=0

I_C=10mA, I_B=0

I_E=10μA, I_C=0

V_CB=60V, I_E=0

V_(BR)CEO

V_(BR)EBO

I_CBO

0.01

300

μA

Collector cut-off current

I_CEX

V_CE=30V,V_EB(off)=3V

V_EB=3V, I_C=0

Emitter cut-off current

I_EBO

V_CE=10V, I_C= 150mA

V_CE=10V, I_C= 0.1mA

V_CE=10V, I_C= 500mA

100

h_FE

DC current gain

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

Collector-emitter saturation voltage

V_CE(sat)

0.3

2.0

1.2

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

Base-emitter saturation voltage

V_BE(sat)

V_CE=20V, I_C= 20mA,

f=100MHz

Transition frequency

f_T

300

MHz

Delay time

Rise time

Storage time

Fall time

t_d

t_r

V_CC=30V, V_BE(off)=-0.5V

I_C=150mA , I_B1= 15mA

t_S

t_f

225

V_CC=30V, I_C=150mA

I_B1=-I_B2=15mA

*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 2.1

12 3 4

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