MGSF1N02ELT3

更新时间： 2024-11-24 22:10:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
5页	120K
描述
N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET

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MGSF1N02ELT3 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–CHANNEL

LOGIC LEVEL

ENHANCEMENT–MODE

TMOS MOSFET

Part of the GreenLine Portfolio of devices with energy–

conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s

High Cell Density, HDTMOS process. Low r

assures

DS(on)

minimal power loss and conserves energy, making this device

ideal for use in space sensitive power management circuitry.

Typical applications are dc–dc converters and power manage-

ment in portable and battery–powered products such as

computers, printers, PCMCIA cards, cellular and cordless

telephones.

3 DRAIN

CASE 318–08, Style 21

SOT–23 (TO–236AB)

•

Low r Provides Higher Efficiency and Extends Battery

DS(on)

Life

GATE

•

Miniature SOT–23 Surface Mount Package Saves Board Space

2 SOURCE

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Symbol

Value

Unit

Vdc

DSS

Gate–to–Source Voltage — Continuous

± 8.0

Drain Current — Continuous @ T = 25°C

750

2000

Drain Current — Pulsed Drain Current (t ≤ 10 µs)

Total Power Dissipation @ T = 25°C

400

– 55 to 150

300

°C

Operating and Storage Temperature Range

Thermal Resistance — Junction–to–Ambient

T , T

stg

°C/W

°C

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

3000

MGSF1N02ELT1

MGSF1N02ELT3

7″

8mm embossed tape

13″

10,000

GreenLine is a trademark of Motorola, Inc.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₈Signal Transistors, FETs and Diodes Device Data

12 3 4 5

中文翻译

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MGSF1N02ELT3 替代型号

型号	品牌	替代类型	描述	数据表
MGSF1N02ELT3	ONSEMI	功能相似	750mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN

与MGSF1N02ELT3相关器件

型号	品牌	获取价格	描述	数据表
MGSF1N02LT1	MOTOROLA	获取价格	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1N02LT1	ONSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts
MGSF1N02LT1	TYSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts NâChannel
MGSF1N02LT1_05	ONSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
MGSF1N02LT1G	ONSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
MGSF1N02LT3	MOTOROLA	获取价格	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1N02LT3	ONSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts
MGSF1N02LT3	TYSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts NâChannel
MGSF1N02LT3G	ONSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
MGSF1N03L	TYSEMI	获取价格	Power MOSFET 30 V, 2.1 A, Single NâChannel,

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