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MGFC36V5867 PDF预览

MGFC36V5867

更新时间： 2024-09-17 03:39:15
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
3页 248K
描述
5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET

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中文翻译

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MGFC36V5867 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
Is Samacsys：N其他特性：HIGH RELIABILITY
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：10 V最大漏极电流 (Abs) (ID)：3.75 A
最大漏极电流 (ID)：1.2 AFET 技术：JUNCTION
最高频带：C BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：25 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

MGFC36V5867 数据手册

 浏览型号MGFC36V5867的Datasheet PDF文件第2页浏览型号MGFC36V5867的Datasheet PDF文件第3页 
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFC36V5867  
5.8  
～
6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET  
DESCRIPTION  
OUTLINE DRAWING Unit : millimeters  
The MGFC36V5867 device is an internally impedance-matched  
GaAs power FET especially designed for use in 5.8 ～6.75GHz  
band amplifiers. The hermetically sealed metal-ceramic package  
guarantees high reliability.  
0.6 +/-0.15  
FEATURES  
●Class A operation  
(2)  
●Internally matched to 50(ohm) system  
●High output power  
P1dB = 36dBm (TYP.) @ f=5.8 ～6.75 GHz  
●High power gain  
(2)  
R-1.6  
GLP = 10 dB (TYP.) @ f=5.8 ～6.75 GHz  
(3)  
APPLICATION  
VSAT  
RECOMMENDED BIAS CONDITIONS  
VDS = 10 (V)  
ID=1.2(A)  
RG=100 (ohm)  
(1) GATE  
(2) SOURCE (FLANGE)  
(3) DRAIN  
GF-8  
< Keep safety first in your circuit designs! >  
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable,  
but there is always the possibility that trouble may occur  
with them. Trouble with semiconductors may lead to personal  
injury, fire or property damage. Remember to give due  
consideration to safety when making your circuit designs,  
with appropriate measures such as (1)placement of  
(Ta=25deg.C)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VGDO  
VGSO  
ID  
Parameter  
Gate to drain voltage  
Gate to source voltage  
Drain current  
Ratings  
-15  
Unit  
V
-15  
V
3.75  
-10  
A
IGR  
Revese gate current  
Forward gate current  
Total power dissipation  
Channel temperature  
Storage temperature  
mA  
mA  
W
21  
IGF  
substitutive, auxiliary circuits, (2)use of non-flammable  
material or (3)prevention against any malfunction or mishap.  
PT *1  
Tch  
25  
175  
deg.C  
deg.C  
Tstg  
-65 / +175  
*1 : Tc=25deg.C  
(Ta=25deg.C)  
ELECTRICAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
3.75  
IDSS  
gm  
Saturated drain current  
Transconductance  
VDS=3V,VGS=0V  
VDS=3V,ID=1.1A  
VDS=3V,ID=10mA  
-
-
-
1
A
S
VGS(off) Pinch-off voltage  
-
-
-4.5  
V
P1dB  
GLP  
ID  
Output power at 1dB gain  
35.0  
36.0  
10.0  
-
-
-
dBm  
dB  
Linear power gain  
Drain Current  
VDS=10V,ID(RF off)=1.2A. f=5.8 ～6.75GHz  
8.5  
-
-
-
1.8  
-
A
P.A.E.  
Power added efficiency  
30  
5
%
deg.C/W  
Rth(ch-c) Thermal resistance  
*1 : Channel-case  
*1 delta Vf method  
6
MITSUBISHI  
ELECTRIC  
123

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