< C band internally matched power GaAs FET >
MGFC36V5964A
5.9 -6.4 GHz BAND / 4W
DESCRIPTION
OUTLINE DRAWING Unit : millimeters
The MGFC36V5964A is an internally impedance-matched
GaAs power FET especially designed for use in 5.9 – 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
21.0 +/-0.3
(1)
0.6 +/-0.15
FEATURES
Class A operation
Internally matched to 50(ohm) system
(2)
(2)
High output power
R-1.6
P1dB=4W (TYP.) @f=5.9 – 6.4GHz
High power gain
GLP=10.5dB (TYP.) @f=5.9 – 6.4GHz
High power added efficiency
P.A.E.=30% (TYP.) @f=5.9 – 6.4GHz
Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=25dBm S.C.L.
(3)
10.7
17.0 +/-0.2
APPLICATION
item 01 : 5.9 – 6.4 GHz band power amplifier
item 51 : 5.9 – 6.4 GHz band digital radio communication
QUALITY
IG
12.0
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.2A Refer to Bias Procedure RG=100ohm
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
GF-8
Absolute maximum ratings (Ta=25C)
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Symbol
Parameter
Ratings
Unit
V
Gate to drain
VGDO
breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
V
ID
Drain current
3.75
-10
A
IGR
IGF
PT *1
Tch
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
mA
mA
W
21
25
175
C
C
Tstg
-65 to +175
*1 : Tc=25C
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
Saturated drain current
Transconductance
VDS=3V,VGS=0V
-
-
-
1
3.75
A
S
IDSS
VDS=3V,ID=1.1A
VDS=3V,ID=10mA
-
gm
Gate to source cut-off voltage
-
-
-4.5
V
VGS(off)
P1dB
GLP
Output power at 1dB gain compression VDS=10V,ID(RF off)=1.2A
35
9
37
10.5
-
-
-
dBm
dB
A
f=5.9 – 6.4GHz
Linear Power Gain
Drain current
ID
-
1.8
-
P.A.E.
IM3 *2
Rth(ch-c) *3
Power added efficiency
3rd order IM distortion
Thermal resistance
-
30
-45
5
%
-42
-
-
dBc
C/W
delta Vf method
6
*2 :Item -51,2 tone test, Po=25dBm Single Carrier Level, f=6.4GHz, Delta f=10MHz
*3 :Channel-case
Publication Date : Apr., 2011
1