Datasheet > MGFC36V7177A_11

MGFC36V7177A_11

更新时间： 2024-09-17 11:02:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	120K
描述
C band internally matched power GaAs FET

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MGFC36V7177A_11 数据手册

< C band internally matched power GaAs FET >

MGFC36V7177A

7.1 – 7.7 GHz BAND / 4W

DESCRIPTION

OUTLINE DRAWING Unit : millimeters

The MGFC36V7177A is an internally impedance-matched

GaAs power FET especially designed for use in 7.1 – 7.7

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

21.0 +/-0.3

(1)

0.6 +/-0.15

FEATURES

Class A operation

Internally matched to 50(ohm) system

(2)

 High output power

R-1.6

P1dB=4W (TYP.) @f=7.1 – 7.7GHz

 High power gain

GLP=9.0dB (TYP.) @f=7.1 – 7.7GHz

 High power added efficiency

P.A.E.=30% (TYP.) @f=7.1 – 7.7GHz

 Low distortion [ item -51]

IM3=-45dBc (TYP.) @Po=25dBm S.C.L.

(3)

10.7

17.0 +/-0.2

APPLICATION

 item 01 : 7.1 – 7.7 GHz band power amplifier

 item 51 : 7.1 – 7.7 GHz band digital radio communication

QUALITY

 IG

12.0

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=1.2A Refer to Bias Procedure  RG=100ohm

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

GF-8

Absolute maximum ratings (Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Symbol

Parameter

Ratings

Unit

Gate to drain

VGDO

breakdown voltage

-15

VGSO Gate to source breakdown voltage

-15

Drain current

3.75

-10

IGR

IGF

PT *1

Tch

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

175

C

Tstg

-65 to +175

*1 : Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

3.75

IDSS

VDS=3V,ID=1.1A

VDS=3V,ID=10mA

Gate to source cut-off voltage

-4.5

VGS(off)

P1dB

GLP

Output power at 1dB gain compression VDS=10V,ID(RF off)=1.2A

36.5

dBm

f=7.1 – 7.7GHz

Linear Power Gain

Drain current

1.8

P.A.E.

IM3 *2

Rth(ch-c) *3

Power added efficiency

3^rdorder IM distortion

Thermal resistance

-45

-42

dBc

C/W

*2 :Item -51,2 tone test, Po=25dBm Single Carrier Level, f=7.7GHz, Delta f=10MHz

*3 :Channel-case

Publication Date : Apr., 2011

12 3

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与MGFC36V7177A_11相关器件

型号	品牌	获取价格	描述	数据表
MGFC36V7177A-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC36V7785A	MITSUBISHI	获取价格	7.7 - 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V7785A_04	MITSUBISHI	获取价格	7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V7785A_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC36V7785A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction
MGFC38V3642	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, C Band, Gallium Arsenide, N-Channel, Junction FET, HERME
MGFC38V3642-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC38V5867	MITSUBISHI	获取价格	5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET
MGFC38V5867_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC38V5964	MITSUBISHI	获取价格	5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET

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