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MGFC36V6472A_04

更新时间： 2024-09-17 03:39:15
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
2页 184K
描述
6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET

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MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFC36V6472A  
6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET  
DESCRIPTION  
The MGFC36V6472A is an internally impedance-matched  
GaAs power FET especially designed for use in 6.4 ~ 7.2  
GHz band amplifiers.The hermetically sealed metal-  
ceramic package guarantees high reliability.  
OUTLINE DRAWING Unit : millimeters  
FEATURES  
Class A operation  
0.6 +/-0.15  
Internally matched to 50(ohm) system  
High output power  
(2)  
(2)  
P1dB = 4W (TYP.) @ f=6.4~7.2GHz  
High power gain  
R-1.6  
GLP = 9.5 dB (TYP.) @ f=6.4~7.2GHz  
High power added efficiency  
P.A.E. = 30 % (TYP.) @ f=6.4~7.2GHz  
Low distortion [ item -51 ]  
(3)  
IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.  
APPLICATION  
item 01 : 6.4~7.2 GHz band power amplifier  
item 51 : 6.4~7.2 GHz band digital radio communication  
QUALITY GRADE  
IG  
RECOMMENDED BIAS CONDITIONS  
VDS = 10 (V)  
(1) GATE  
(2) SOURCE (FLANGE)  
(3) DRAIN  
GF-8  
ID = 1.2 (A)  
Refer to Bias Procedure"  
RG= 100 (ohm)  
(Ta=25 deg.C)  
ABSOLUTE MAXIMUM RATINGS  
< Keep safety first in your circuit designs! >  
Symbol  
VGDO  
VGSO  
ID  
Parameter  
Gate to drain voltage  
Gate to source voltage  
Drain current  
Ratings  
Unit  
V
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable, but  
there is always the possibility that trouble may occur with them.  
Trouble with semiconductors may lead to personal injury, fire  
or property damage. Remember to give due consideration to  
safety when making your circuit designs, with appropriate  
measures such as (1)placement of substitutive, auxiliary  
circuits, (2)use of non-flammable material or (3)prevention  
against any malfunction or mishap.  
-15  
-15  
V
3.75  
-10  
A
IGR  
Reverse gate current  
Forward gate current  
Total power dissipation *1  
Channel temperature  
Storage temperature  
mA  
mA  
W
IGF  
21  
PT  
25  
Tch  
175  
deg.C  
deg.C  
Tstg  
-65 / +175  
*1 : Tc=25 deg.C  
(Ta=25 deg.C)  
ELECTRICAL CHARACTERISTICS  
Limits  
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
Typ.  
-
Max.  
IDSS  
gm  
Saturated drain current  
Transconductance  
VDS=3V, VGS=0V  
VDS=3V, ID=1.1A  
VDS=3V, ID=10mA  
-
-
3.75  
A
S
1
-
Gate to source cut-off voltage  
Output power at 1dB gain compression  
Linear power gain  
VGS(off)  
P1dB  
GLP  
ID  
-
-
-4.5  
V
35  
8
37  
9.5  
-
-
-
dBm  
dB  
VDS=10V, ID(RF off)=1.2A, f=6.4~7.2GHz  
Drain current  
-
1.8  
-
A
P.A.E.  
IM3  
Power added efficiency  
-
30  
-45  
5
%
3rd order IM distortion  
*1  
*2  
-42  
-
-
dBc  
deg.C/W  
Rth(ch-c) Thermal resistance  
Delta Vf method  
6
*1 : item -51, 2 tone test, Po=25dBm Single Carrier Level, f=7.2GHz, Delta f=10MHz  
*2 : Channel to case  
June/2004  
MITSUBISHI  
ELECTRIC  
12

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