生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.81 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 10 V | 最大漏极电流 (Abs) (ID): | 3.8 A |
最大漏极电流 (ID): | 1.2 A | FET 技术: | JUNCTION |
最高频带: | C BAND | JESD-30 代码: | R-CDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 最高工作温度: | 175 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 25 W | 最小功率增益 (Gp): | 9 dB |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC36V5964A_04 | MITSUBISHI |
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5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V5964A_11 | MITSUBISHI |
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C band internally matched power GaAs FET | |
MGFC36V5964A-51 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC36V6471 | MITSUBISHI |
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Transistor, | |
MGFC36V6472A | MITSUBISHI |
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6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V6472A_04 | MITSUBISHI |
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6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V6472A_11 | MITSUBISHI |
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C band internally matched power GaAs FET | |
MGFC36V6472A-01 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC36V6472A-51 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC36V7177A | MITSUBISHI |
获取价格 |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET |