品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | / | |
页数 | 文件大小 | 规格书 |
3页 | 253K | |
描述 | ||
6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC39V3436 | MITSUBISHI |
获取价格 |
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET | |
MGFC39V3436_04 | MITSUBISHI |
获取价格 |
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET | |
MGFC39V3436_11 | MITSUBISHI |
获取价格 |
C band internally matched power GaAs FET | |
MGFC39V3436-51 | MITSUBISHI |
获取价格 |
Transistor | |
MGFC39V3742A | MITSUBISHI |
获取价格 |
3.7 - 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET | |
MGFC39V3742A_04 | MITSUBISHI |
获取价格 |
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET | |
MGFC39V3742A_11 | MITSUBISHI |
获取价格 |
C band internally matched power GaAs FET | |
MGFC39V4450 | MITSUBISHI |
获取价格 |
Transistor | |
MGFC39V4450-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC39V4450A | MITSUBISHI |
获取价格 |
4.4 - 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET |