品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | / | |
页数 | 文件大小 | 规格书 |
2页 | 87K | |
描述 | ||
Transistor |
生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 7.5 A | FET 技术: | METAL SEMICONDUCTOR |
最高工作温度: | 175 °C | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 42.8 W | 子类别: | Other Transistors |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC39V3742A | MITSUBISHI |
获取价格 |
3.7 - 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET | |
MGFC39V3742A_04 | MITSUBISHI |
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3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET | |
MGFC39V3742A_11 | MITSUBISHI |
获取价格 |
C band internally matched power GaAs FET | |
MGFC39V4450 | MITSUBISHI |
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Transistor | |
MGFC39V4450-51 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC39V4450A | MITSUBISHI |
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4.4 - 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET | |
MGFC39V4450A_04 | MITSUBISHI |
获取价格 |
4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET | |
MGFC39V4450A_11 | MITSUBISHI |
获取价格 |
C band internally matched power GaAs FET | |
MGFC39V4450A-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC39V4450A-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction |