Datasheet > MGFC39V5867_12

MGFC39V5867_12

更新时间： 2024-11-09 12:23:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	104K
描述
C band internally matched power GaAs FET

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MGFC39V5867_12 数据手册

< C band internally matched power GaAs FET >

MGFC39V5867

5.8 – 6.75 GHz BAND / 8W

DESCRIPTION

OUTLINE DRAWING Unit : millimeters

The MGFC39V5867 is an internally impedance-matched

GaAs power FET especially designed for use in 5.8 – 6.75

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

21.0 +/-0.3

(1)

0.6 +/-0.15

FEATURES

Class A operation

Internally matched to 50(ohm) system

(2)

 High output power

R-1.6

P1dB=8W (TYP.) @f=5.8 – 6.75GHz

 High power gain

GLP=9dB (TYP.) @f=5.8 – 6.75GHz

(3)

APPLICATION

 VSAT

10.7

17.0 +/-0.2

12.0

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=2.4A  RG=50ohm

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

GF-8

Absolute maximum ratings (Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Symbol

VGDO

Parameter

breakdown voltage

Ratings

-15

Unit

Gate to drain

VGSO Gate to source breakdown voltage

-15

Drain current

7.5

IGR

IGF

PT *1

Tch

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-20

42.8

175

C

Tstg

-65 to +175

*1 : Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

7.5

IDSS

VDS=3V,ID=2.2A

VDS=3V,ID=20mA

Gate to source cut-off voltage

-4.5

VGS(off)

P1dB

GLP

Output power at 1dB gain compression VDS=10V,ID(RF off)=2.4A

dBm

f=5.8 – 6.75GHz

Linear Power Gain

Drain current

P.A.E.

Rth(ch-c) *2

Power added efficiency

Thermal resistance

delta Vf method

3.5

C/W

*2 :Channel-case

Publication Date : Aug., 2012

12 3

中文翻译

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与MGFC39V5867_12相关器件

型号	品牌	获取价格	描述	数据表
MGFC39V5964	MITSUBISHI	获取价格	5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
MGFC39V5964-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC39V5964-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC39V5964A	MITSUBISHI	获取价格	5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
MGFC39V5964A_04	MITSUBISHI	获取价格	5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
MGFC39V5964A_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC39V6472A	MITSUBISHI	获取价格	6.4 - 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
MGFC39V6472A_04	MITSUBISHI	获取价格	6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
MGFC39V6472A_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC39V6472A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction

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