Datasheet > MGFC40V3742_04

MGFC40V3742_04

更新时间： 2024-11-30 03:55:59

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	208K
描述
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGFC40V3742_04 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC40V3742

3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

DESCRIPTION

Unit: millimeters (inches)

OUTLINE DRAWING

The MGFC40V3742 is an internally impedance-matched

GaAs power FET especially designed for use in 3.7 ~ 4.2

GHz band amplifiers.The hermetically sealed metal-ceramic

package guarantees high reliability.

24+/-0.3

R1.25

(1)

0.6+/-0.15

FEATURES

Class A operation

R1.2

Internally matched to 50(ohm) system

High output power

P1dB = 10W (TYP.) @ f=3.7~4.2GHz

High power gain

(2)

GLP = 11 dB (TYP.) @ f=3.7~4.2GHz

High power added efficiency

P.A.E. = 32 % (TYP.) @ f=3.7~4.2GHz

Low distortion [ item -51 ]

(3)

IM3= -45 dBc(TYP.) @Po=29(dBm) S.C.L.

20.4+/-0.2

13.4

APPLICATION

item 01 : 3.7~4.2 GHz band power amplifier

item 51 : 3.7~4.2 GHz band digital radio communication

QUALITY GRADE

(1): GATE

(2): SOURCE (FLANGE)

(3): DRAIN

GF-18

RECOMMENDED BIAS CONDITIONS

VDS = 10(V)

ID = 2.4 (A)

Rg = 50(ohm) Refer to Bias Procedure

(Ta=25 deg.C)

ABSOLUTE MAXIMUM RATINGS

< Keep safety first in your circuit designs! >

Symbol

VGDO

VGSO

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

-15

Unit

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety

when making your circuit designs, with appropriate measures

such as (1)placement of substitutive, auxiliary circuits, (2)use of

non-flammable material or (3)prevention against any malfunction

or mishap.

-15

7.5

IGR

Reverse gate current

Forward gate current

Total power dissipation *1

Channel temperature

Storage temperature

-20

IGF

42.8

175

Tch

deg.C

Tstg

-65 / +175

*1 : Tc=25 deg.C

(Ta=25 deg.C)

ELECTRICAL CHARACTERISTICS

Limits

Symbol

Parameter

Test conditions

Unit

Min.

Typ.

4.5

Max.

IDSS

Saturated drain current

Transconductance

Gate to source cut-off voltage

Output power at 1dB gain compression

Linear power gain

VDS=3V, VGS=0V

VDS=3V, ID=2.2A

VDS=3V, ID=40mA

-2

39.5

VGS(off)

P1dB

GLP

-3

-4

40.5

2.4

-45

dBm

VDS=10V, ID(RF off)=2.4A, f=3.7~4.2GHz

Drain current

P.A.E.

IM3

Power added efficiency

3rd order IM distortion

-42

dBc

Rth(ch-c) Thermal resistance

Delta Vf method

3.5 deg.C/W

*1 : item -51, 2 tone test, Po=29dBm Single Carrier Level, f=4.2GHz, Delta f=10MHz

*2 : Channel to case

June/2004

MITSUBISHI

ELECTRIC

中文翻译

下载PDF

与MGFC40V3742_04相关器件

型号	品牌	获取价格	描述	数据表
MGFC40V3742_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC40V3742-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V3742-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V3742A	MITSUBISHI	获取价格	3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V3742A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V3742A-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V4450	MITSUBISHI	获取价格	4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET
MGFC40V4450_04	MITSUBISHI	获取价格	4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET
MGFC40V4450_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC40V4450-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction

与MGFC40V3742_04相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

MGFC40V3742_04

MGFC40V3742_04 数据手册

与MGFC40V3742_04相关器件

与MGFC40V3742_04相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MGFC40V3742_04

MGFC40V3742_04 数据手册

与MGFC40V3742_04相关器件

与MGFC40V3742_04相关文章

您还可以找

您在本页遇到什么问题？