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MGFC40V6472_04 PDF预览

MGFC40V6472_04

更新时间： 2024-09-18 04:16:03
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
2页 190K
描述
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

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MGFC40V6472_04 数据手册

 浏览型号MGFC40V6472_04的Datasheet PDF文件第2页 
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFC40V6472  
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET  
DESCRIPTION  
The MGFC40V6472A is an internally impedance matched  
GaAs power FET especially designed for use in 6.4 - 7.2  
GHz band amplifiers. The hermetically sealed metal-ceramic  
package guarantees high reliability.  
OUTLINE DRAWING  
Unit: millimeters (inches)  
24+/-0.3  
(1)  
R1.25  
0.6+/-0.15  
FEATURES  
Internally matched to 50 ohm system  
2MIN  
R1.2  
High output power  
P1dB = 10W (TYP.) @ f=6.4 - 7.2 GHz  
High power gain  
(2)  
15.8  
8.0+/-0.2  
17.4+/-0.3  
GLP =9 dB (TYP.) @ f=6.4 - 7.2 GHz  
High power added efficiency  
P.A.E. = 32 % (TYP.) @ f=6.4 - 7.2 GHz  
Low Distortion[Item-51]  
(3)  
2MIN  
IM3=-45 dBc(TYP.)@Po=29 dBm S.C.L.  
20.4+/-0.2  
APPLICATION  
item 01 : 6.4 - 7.2 GHz band power amplifier  
13.4  
item 51 : 6.4 - 7.2 GHz band digital radio communication  
2.4+/-0.2  
0.1  
QUALITY GRADE  
IG  
4.0+/-0.4  
1.4  
RECOMMENDED BIAS CONDITIONS  
VDS = 10 (V)  
(1): GATE  
(2): SOURCE (FLANGE)  
(3): DRAIN  
ID = 2.4 (A)  
Rg=50 (ohm) Refer to Bias Procedure  
GF-18  
ABSOLUTE MAXIMUM RATINGS  
< Keep safety first in your circuit designs! >  
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable,  
but there is always the possibility that trouble may occur  
with them. Trouble with semiconductors may lead to personal  
injury, fire or property damage. Remember to give due  
consideration to safety when making your circuit designs,  
with appropriate measures such as (1)placement of  
Symbol  
Parameter  
Ratings  
-15  
Unit  
V
VGDO Gate to drain voltage  
VGSO Gate to source voltage  
-15  
V
ID  
Drain current  
7.5  
A
IGR  
IGF  
PT  
Reverse gate current  
Forward gate current  
Total power dissipation  
Channel temperature  
Storage temperature  
-20  
mA  
mA  
W
42  
42.8  
Tch  
Tstg  
175  
deg.C  
deg.C  
substitutive, auxiliary circuits, (2)use of non-flammable  
material or (3)prevention against any malfunction or mishap.  
-65 / +175  
*1 : Tc=25 Deg.C  
ABSOLUTE MAXIMUM RATINGS  
Limits  
Symbol  
Parameter  
Test conditions  
Unit  
Min  
Typ  
4.5  
2
Max  
6
IDSS  
Gm  
Saturated drain current  
Transconductance  
VDS = 3V , VGS = 0V  
VDS = 3V , ID = 2.2A  
VDS = 3V , ID = 40mA  
-
-
A
S
V
-
VGS(off) Gate to source cut-off voltage  
-2  
-3  
-4  
Output power at 1dB gain  
compression  
P1dB  
39.5  
7
40.5  
9
-
-
dBm  
dB  
GLP  
Linear power gain  
VDS=10V, ID(RF off)=2.4A, f=6.4-7.2GHz  
ID  
PAE  
IM3  
Drain current  
-
-
2.4  
32  
-45  
-
-
-
A
%
Power added efficiency  
3rd order IM distortion *1  
-42  
-
-
dBc  
Rth(ch-c) Thermal resistance  
*2  
Delta Vf method  
3.5  
Deg.C/W  
*1 : item -51,2 tone test,Po=29.0dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case  
June/2004  
MITSUBISHI  
ELECTRIC  
12

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