Datasheet > MGFC40V5258_04

MGFC40V5258_04

更新时间： 2024-11-30 04:16:03

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	209K
描述
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGFC40V5258_04 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC40V5258

5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC40V5258 is an internally impedance-matched

Unit: millimeters

OUTLINE DRAWING

GaAs power FET especially designed for use in 5.2 - 5.8

24+/-0.3

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

R1.25

(1)

0.6+/-0.15

FEATURES

Class A operation

R1.2

Internally matched to 50(ohm) system

High output power

P1dB = 10W (TYP.) @ f=5.2 - 5.8 GHz

High power gain

(2)

GLP = 10 dB (TYP.) @ f=5.2 - 5.8GHz

High power added efficiency

P.A.E. = 32 % (TYP.) @ f=5.2 - 5.8GHz

(3)

20.4+/-0.2

13.4

APPLICATION

item 01 : 5.2 - 5.8 GHz band power amplifier

item 51 : 5.2 - 5.8 GHz band digital radio communication

QUALITY GRADE

(1): GATE

RECOMMENDED BIAS CONDITIONS

(2): SOURCE (FLANGE)

(3): DRAIN

VDS = 10 (V)

ID = 2.4 (A)

GF-18

RG=50 (ohm)

< Keep safety first in your circuit designs! >

(Ta=25deg.C)

ABSOLUTE MAXIMUM RATINGS

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them. Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (1)placement of

Symbol

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

-15

Unit

VGDO

VGSO

-15

7.5

IGR

Reverse gate current

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

-20

IGF

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

Tch

42.8

175

deg.C

Tstg

-65 / +175

*1 : Tc=25deg.C

(Ta=25deg.C)

ELECTRICAL CHARACTERISTICS

Limits

Typ.

4.5

Unit

Symbol

Parameter

Test conditions

Min.

Max.

IDSS

Saturated drain current

Transconductance

VDS = 3V , VGS = 0V

VDS = 3V , ID = 2.2A

VDS = 3V , ID = 40mA

VGS(off)

Gate to source cut-off voltage

-2

-3

-4

Output power at 1dB gain

compression

P1dB

39.5

40.5

dBm

GLP

Linear power gain

Drain current

VDS=10V, ID(RF off)=2.4A, f=5.2 - 5.8GHz

delta Vf method

2.4

P.A.E.

Power added efficiency

Rth(ch-c)

deg.C/W

Thermal resistance

3.5

*1 : Channel-case

MITSUBISHI

ELECTRIC

June/2004

中文翻译

下载PDF

与MGFC40V5258_04相关器件

型号	品牌	获取价格	描述	数据表
MGFC40V5258_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC40V5258-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V5258-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V5964	MITSUBISHI	获取价格	5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V5964_04	MITSUBISHI	获取价格	5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V5964_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC40V5964-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V5964A	MITSUBISHI	获取价格	5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V5964A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V6472	MITSUBISHI	获取价格	6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

与MGFC40V5258_04相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

MGFC40V5258_04

MGFC40V5258_04 数据手册

与MGFC40V5258_04相关器件

与MGFC40V5258_04相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MGFC40V5258_04

MGFC40V5258_04 数据手册

与MGFC40V5258_04相关器件

与MGFC40V5258_04相关文章

您还可以找

您在本页遇到什么问题？